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The in-plane heterojunctions with atomic-level thickness and chemical-bond-connected tight interfaces possess high carrier separation efficiency and fully exposed surface active sites, thus exhibiting exceptional photocatalytic performance. However, the construction of in-plane heterojunctions remains a significant challenge. Herein, we prepared an in-plane ZnInS/In(OH) heterojunction (ZISOH) by partial conversion of ZnInS to In(OH) through the addition of HO. This oxidation etching-hydrolysis approach enables the ZISOH heterojunction to not only preserve the original nanosheet morphology of ZnInS but also form an intimate interface. Moreover, generated In(OH) serves as an electron-accepting platform and also promotes the adsorption of CO. As a result, the heterojunction exhibits a remarkably enhanced performance for photocatalytic CO reduction. The production rate and selectivity of CO reach 1760 μmol g h and 78%, respectively, significantly higher than those of ZnInS (842 μmol g h and 65%). This work puts forward a feasible and facile approach to construct in-plane heterojunctions to enhance the photocatalytic performance of two-dimensional metal sulfides.
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http://dx.doi.org/10.1021/acsami.4c02158 | DOI Listing |
ACS Nano
September 2025
State Key Laboratory for Physical Chemistry of Solid Surfaces, Innovation Laboratory for Sciences and Technologies of Energy Material of Fujian Province (IKKEM), Collaborative Innovation Center of Chemistry for Energy Materials (iChem), Engineering Research Center of Electrochemical Technologies of
Due to the high solubility and multielectron transfer capabilities of polysulfides, aqueous polysulfide redox flow batteries (PS-RFBs) have emerged as promising candidates for large-scale energy storage, offering both low cost and high capacity. However, the sluggish electrochemical kinetics of polysulfides leads to significantly high polarization and low energy efficiency. Here, we tailor a two-dimensional ordered mesoporous nitrogen-doped carbon@MoS (Meso-NC@MoS) heterojunction with a sandwich-like nanostructure to accelerate the redox kinetics of polysulfides.
View Article and Find Full Text PDFAdv Mater
July 2025
Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
Lamed by the Shockley-Queisser limit, complex device architectures and material selection, traditional photovoltaic (PV) technologies based on heterojunctions are difficult to implement reconfigurable PV generation with high power efficiency. Here, the universal bulk ionicphotovoltaic (BIPV) effect in 2D quaternary metal thio(seleno)phosphates (QMTPs) crystals is reported, and demonstrates the giant photocurrent generation with excellent reconfigurability. The programmable ion migration driven by an electric field not only leads to the in-plane electric potential gradient, but also contributes to the reversible modulation of crystal inversion asymmetry.
View Article and Find Full Text PDFProc Natl Acad Sci U S A
July 2025
The Njord Centre, Department of Physics, University of Oslo, Oslo 0316, Norway.
The friction force typically increases linearly with normal load with a constant of proportionality called the coefficient of friction. Most materials exhibit a positive friction coefficient, so that an increase in the normal load leads to an increase in the friction force. Recently, materials with negative friction coefficients have been observed at meticulously constructed interfaces due to an interplay between superstructures at heterojunctions, out-of-plane buckling, or the ordering of thin water films.
View Article and Find Full Text PDFMater Horiz
July 2025
School of Materials Science and Engineering, Nankai University, 300350 Tianjin, China.
Two-dimensional (2D) homo- and heterojunctions in van der Waals materials exhibit remarkable electrical, mechanical, and optical properties, making them promising for diverse applications. In trilayer graphene, ABA (Bernal) and ABC (rhombohedral) stacking domains naturally form homojunctions at lateral boundaries, enabling in-plane semi-metal/semiconductor p-n junctions under a perpendicular electric field. The domain-wall (DW) soliton, characterized by strained carbon rings, plays a key role in these junctions.
View Article and Find Full Text PDFRSC Adv
June 2025
College of Physics and Electronics Information, Yunnan Key Laboratory of Opto-Electronic Information Technology, Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials-Ministry of Education, Yunnan Normal University Kunming 650500 P. R. China xulin138884
This study investigated the changes in the electronic properties of the FeCl/MoSiN heterostructure by modulating interlayer distance, in-plane strain, and external electric field. The results indicated that the FeCl/MoSiN van der Waals heterostructure (vdWH) is an indirect band gap semiconductor with a band gap of 1.21/2.
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