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Article Abstract
The scale-free ferroelectricity with superior Si compatibility of HfO has reawakened the feasibility of scaled-down nonvolatile devices and beyond the complementary metal-oxide-semiconductor (CMOS) architecture based on ferroelectric materials. However, despite the rapid development, fundamental understanding, and control of the metastable ferroelectric phase in terms of oxygen ion movement of HfO remain ambiguous. In this study, we have deterministically controlled the orientation of a single-crystalline ferroelectric phase HfO thin film via oxygen ion movement. We induced a topotactic phase transition of the metal electrode accompanied by the stabilization of the differently oriented ferroelectric phase HfO through the migration of oxygen ions between the oxygen-reactive metal electrode and the HfO layer. By stabilizing different polarization directions of HfO through oxygen ion migration, we can gain a profound understanding of the oxygen ion-relevant unclear phenomena of ferroelectric HfO.
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