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Article Abstract
Perovskite quantum dots (QDs) and organic materials have great research potential in the field of optoelectronic devices. In this paper, MEH-PPV/CsPbBrheterojunction photodetectors (PDs) are prepared by spin coating method based on the good photoelectric properties of CsPbBrperovskite QDs and MEH-PPV. The MEH-PPV/CsPbBrheterojunction improves the energy level arrangement, and CsPbBrQDs can passivate the surface defects of MEH-PPV films to achieve effective charge separation and transfer, thus inhibiting the dark current and improving the photoelectric performance of the device. Under 532 nm laser irradiation, the responsivity () of MEH-PPV/CsPbBrheterojunction PD is 11.98 A W, the specific detectivity (*) is 6.98 × 10Jones, and the response time is 15/16 ms. This work provides experience for the study of perovskite QDs and organic materials heterojunction optoelectronic devices.
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