Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease in the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin-orbit split-off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10570295 | PMC |
| http://dx.doi.org/10.1038/s41598-023-43702-w | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
KCuS: A Layered Inorganic Chalcogenide Semiconductor as a Promising Light Absorber.
Inorg Chem
September 2025
Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India.
A potential replacement that alleviates the shortcomings of the dominant light absorber materials used in solar photovoltaics has been synthesized, and its microstructural, electronic structure, and optical properties have been investigated. KCuS crystals were synthesized by the carbonate method. Transmission electron microscopy (TEM) established [010] as the growth direction of the needle-like monoclinic crystals.
View Article and Find Full Text PDFAtomic-Scale Electric Potential Landscape across Molecularly Gated Bilayer MoS Resolved by Photoemission.
ACS Nano
September 2025
Insitut für Physik and Center for the Science of Materials Berlin, Humboldt-Universität zu Berlin, Berlin 12489, Germany.
Electric gating in atomically thin field-effect devices based on transition-metal dichalcogenides has recently been employed to manipulate their excitonic states, even producing exotic phases of matter, such as an excitonic insulator or Bose-Einstein condensate. Here, we mimic the electric gating effect of a bilayer-MoS on graphite by charge transfer induced by the adsorption of molecular p- and n-type dopants. The electric fields produced are evaluated from the electronic energy-level realignment and Stark splitting determined by X-ray and UV photoelectron spectroscopy measurements and compare very well with literature values obtained by optical spectroscopy for similar systems.
View Article and Find Full Text PDFA CuBiO/TiO p-n Heterojunction for Enhancing the Barrier Protection of a Nickel-Based Layer on the Magnesium Alloy.
J Phys Chem Lett
September 2025
Precise Synthesis and Function Development Key Laboratory of Sichuan Province, College of Chemistry and Chemical Engineering, China West Normal University, Nanchong 637002, PR China.
Herein, CuBiO microspheres were first deposited on TiO nanotube arrays to develop a p-n CuBiO/TiO heterojunction by a facile hydrothermal protocol. The variations in the photoinduced open-circuit potential, photocurrent, and electrochemical parameters of the nickel-plated magnesium alloy (Mg/Ni) demonstrated the remarkably strengthened photoelectrochemical efficiency and photocathodic protection (PCP) capability caused by the CuBiO modification. This enhancement is attributed to establishing a built-in electric field and intensified light absorption in a broadened wavelength spectrum, confirmed by the valence band XPS and ultraviolet-visible spectra.
View Article and Find Full Text PDFResolving In Situ Exposure Dynamics in a Chemically Amplified EUV Photoresist Using Table-Top EUV Photoemission Spectroscopy.
ACS Appl Mater Interfaces
September 2025
Imec, Kapeldreef 75, 3001 Leuven, Belgium.
Extreme ultraviolet (EUV) lithography has revolutionized the high-volume manufacturing of nanoscale components. The use of EUV light leads to ionization-driven chemistry in the imaging materials of lithography, the photoresists. The complex interplay of ionization, generation of primary/secondary electrons, and the subsequent chemical mechanisms that lead to image formation in photoresists has been notoriously difficult to study.
View Article and Find Full Text PDFBoron-Modified Heterointerface Boosts Kesterite Solar Cells to 0.58 V Open-Circuit Voltage.
Small
September 2025
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences (CAS) Ningbo, Zhejiang, 315201, P. R. China.
Achieving high open-circuit voltage (V) continues to pose a significant challenge for kesterite CuZnSn(S,Se) (CZTSSe) solar cells, predominantly due to the pronounced charge carrier recombination occurring at heterointerface (HEI). To address this issue, an innovative non-metallic boron (B)-modification strategy is developed to optimize the HEI. The key advantages of this strategy are as follows: (i) Leveraging the strong bonding characteristic of B with three valence electrons, the dangling bonds on the absorber surface can be fully saturated, effectively passivating surface states without introducing new defects; (ii) Moreover, diffusion of B into the near-surface region of HEI during selenization process can create weak n-type B donor defects, which lowers the valence band maximum (VBM) of the absorber and mitigates Fermi level pinning.
View Article and Find Full Text PDF