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Unlabelled: Adenosine triphosphate (ATP) is closely related to the pathogenesis of certain diseases, so the detection of trace ATP is of great significance to disease diagnosis and drug development. Graphene field-effect transistors (GFETs) have been proven to be a promising platform for the rapid and accurate detection of small molecules, while the Debye shielding limits the sensitive detection in real samples. Here, a three-dimensional wrinkled graphene field-effect transistor (3D WG-FET) biosensor for ultra-sensitive detection of ATP is demonstrated. The lowest detection limit of 3D WG-FET for analyzing ATP is down to 3.01 aM, which is much lower than the reported results. In addition, the 3D WG-FET biosensor shows a good linear electrical response to ATP concentrations in a broad range of detection from 10 aM to 10 pM. Meanwhile, we achieved ultra-sensitive (LOD: 10 aM) and quantitative (range from 10 aM to 100 fM) measurements of ATP in human serum. The 3D WG-FET also exhibits high specificity. This work may provide a novel approach to improve the sensitivity for the detection of ATP in complex biological matrix, showing a broad application value for early clinical diagnosis and food health monitoring.
Electronic Supplementary Materials: The online version contains supplementary material available at 10.1007/s11467-023-1281-7 and https://journal.hep.com.cn/fop/EN/10.1007/s11467-023-1281-7.
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http://dx.doi.org/10.1007/s11467-023-1281-7 | DOI Listing |
ACS Nano
September 2025
Insitut für Physik and Center for the Science of Materials Berlin, Humboldt-Universität zu Berlin, Berlin 12489, Germany.
Electric gating in atomically thin field-effect devices based on transition-metal dichalcogenides has recently been employed to manipulate their excitonic states, even producing exotic phases of matter, such as an excitonic insulator or Bose-Einstein condensate. Here, we mimic the electric gating effect of a bilayer-MoS on graphite by charge transfer induced by the adsorption of molecular p- and n-type dopants. The electric fields produced are evaluated from the electronic energy-level realignment and Stark splitting determined by X-ray and UV photoelectron spectroscopy measurements and compare very well with literature values obtained by optical spectroscopy for similar systems.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Nanoelectronics Graphene and 2D Materials Laboratory, CITIC-UGR, Department of Electronics, University of Granada, Granada 18014, Spain.
The relentless scaling of semiconductor technology demands materials beyond silicon to sustain performance improvements. Transition metal dichalcogenides (TMDs), particularly MoS, offer excellent electronic properties; however, achieving scalable and CMOS-compatible fabrication remains a critical challenge. Here, we demonstrate a scalable and BEOL-compatible approach for the direct wafer-scale growth of MoS devices using plasma-enhanced atomic layer deposition (PE-ALD) at temperatures below 450 °C, fully compliant with CMOS thermal budgets.
View Article and Find Full Text PDFNanoscale
September 2025
School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, 401331, China.
Chemical doping has emerged as a powerful approach for modulating the electronic properties of graphene, and particularly for enabling its integration into advanced electronic and optoelectronic devices. While considerable progress has been made in achieving stable p-type doping, realizing efficient and reliable n-type doping remains a greater challenge due to the inherent instability of most electron-donating dopants and intrinsic semi-metallic nature of pristine graphene. This review summarises the recent developments in n-type chemical doping of graphene films, with a primary focus on substitutional doping and surface charge transfer mechanisms.
View Article and Find Full Text PDFAdv Mater
September 2025
Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea.
In this study, the first sub-60 mV dec super-steep subthreshold swing (SS) of graphene/InGaZnO (IGZO) cold-source field-effect transistor (CSFET) arrays is demonstrated. The linear density of states of the Dirac-cone-type graphene suppresses the Boltzmann thermal tail near the graphene/IGZO interface which in turn causes super-exponentially decaying electron density with increasing energy, leading to an extremely low off current and SS value. In particular, by introducing an HfO high-k dielectric with a low body factor, the surface potential is effectively modulated, further reducing SS by ≈46.
View Article and Find Full Text PDFRes Sq
August 2025
Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, 16802, United States.
Real-time, multiplexed monitoring of wound infection biomarkers is essential for early detection of infection and inflammation, as well as for evaluating wound healing progression. However, existing biosensing technologies lack the sensitivity, specificity, and integration needed to meet these clinical demands. To address current limitations in wound monitoring, we developed a portable and multimodal sensor system capable of simultaneously detecting uric acid (UA), phenazine-1-carboxylic acid (PCA), interleukin-6 (IL-6), and pH.
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