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In this work, we use a chemical method to design novel 2D-material/0D-quantum dot (MoS/SnS) heterostructures. Furthermore, the unique 2D/0D heterostructure enhanced the NO gas-sensing capability 3 times and increased the sensing recoverability by more than 90%. Advanced characterization tools such as SEM, TEM, XRD, and AFM confirm the formation of MoS/SnS heterojunction nanomaterials. Using AFM data, the average thickness of the MoS layer was found to be 5 nm. The highest sensor response of 0.33 with good repeatability was observed at 250 ppb of NO. Sensing characterization reveals the ultra-fast response time, that is, 74 s, at 50 ppb of NO. The limit of detection for detecting NO was also found to be very low, that is, 0.54 ppb, by using MoS/SnS heterostructures. The theoretical calculations based on density functional theory well corroborated and quantified the intermolecular interaction and gas adsorption on the surface of MoS/SnS.
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http://dx.doi.org/10.1021/acsami.2c03173 | DOI Listing |
Natl Sci Rev
May 2025
State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
Two-dimensional (2D) van der Waals (vdW) heterostructures have emerged as a groundbreaking candidate for future integrated circuits due to their tunable band structures, atomically sharp interfaces and seamless compatibility with complementary metal-oxide-semiconductor technologies. Despite their promise, existing synthesis methods, such as mechanical transfer and vapor-phase conversion, struggle to achieve the high-quality, scalable production for practical applications. In response to these longstanding challenges, our study unveils for the first time the direct epitaxial growth of wafer-scale 2D vdW heterostructures (MoS[Formula: see text]/SnS[Formula: see text]) with exceptional quality and uniformity.
View Article and Find Full Text PDFRSC Adv
July 2024
Department of Electronic and Instrumentation Science, Savitribai Phule Pune University India
In this study, we explored the gas-sensing capabilities of MoS petaloid nanosheets in the metallic 1T phase with the commonly investigated semiconducting 2H phase. By synthesizing SnS nanoparticles and MoS petaloid nanosheets through a hydrothermal method, we achieve notable sensing performance for NO gas at room temperature (27 °C). This investigation represents a novel study, and to the best of our knowledge no, prior similar investigations have been reported in the literature for 1T@2HMoS/SnS heterostructures for room temperature NO gas sensing.
View Article and Find Full Text PDFAdv Sci (Weinh)
September 2024
Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Institute of New Energy, Fudan University, Shanghai, 200433, China.
Lithium-ion batteries with transition metal sulfides (TMSs) anodes promise a high capacity, abundant resources, and environmental friendliness, yet they suffer from fast degradation and low Coulombic efficiency. Here, a heterostructured bimetallic TMS anode is fabricated by in situ encapsulating SnS/MoS nanoparticles within an amphiphilic hollow double-graphene sheet (DGS). The hierarchically porous DGS consists of inner hydrophilic graphene and outer hydrophobic graphene, which can accelerate electron/ion migration and strongly hold the integrity of alloy microparticles during expansion and/or shrinkage.
View Article and Find Full Text PDFSmall
November 2024
State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, P. R. China.
ACS Appl Mater Interfaces
May 2024
School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China.
The strong light-matter interaction and naturally passivated surfaces of van der Waals materials make heterojunctions of such materials ideal candidates for high-performance photodetectors. In this study, we fabricated SnS/MoS van der Waals heterojunctions and investigated their photoelectric properties. Using an applied gate voltage, we can effectively alter the band arrangement and achieve a transition in type II and type I junctions.
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