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Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8953703 | PMC |
http://dx.doi.org/10.3390/nano12060910 | DOI Listing |
Natl Sci Rev
September 2025
The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin 300071, China.
Contactless human-machine interfaces (C-HMIs) are revolutionizing artificial intelligence (AI)-driven domains, yet face application limitations due to narrow sensing ranges, environmental fragility, and structural rigidity. To address these obstacles, we developed a flexible photonic C-HMI (Flex-PCI) using flexible visible-blind near-infrared organic photodetectors. In addition to its unprecedented performance across key metrics, including broad detection range (0.
View Article and Find Full Text PDFMed Phys
September 2025
Department of Biomedical Engineering, University of California at Davis, Davis, California, USA.
Background: High-resolution and high-sensitivity small-animal positron emission tomography (PET) scanners are essential non-invasive functional imaging tools in preclinical research. To develop small-animal PET scanners with uniform and high spatial resolution across the field-of-view, PET detectors capable of providing good depth-of-interaction (DOI) information are critical. Dual-ended readout detectors based on lutetium-yttrium oxyorthosilicate (LYSO) arrays with fine pitch represent a promising approach, wherein the choice of inter-crystal reflector significantly impacts the detector performance.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Department of Organic and Nano Engineering, and Human-Tech Convergence Program, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Photomultiplication-type organic photodetectors (PM-type OPDs) have recently attracted attention. However, the development of polymer donors specifically tailored for this architecture has rarely been reported. In this study, we synthesized benzobisoxazole-based polymer donors incorporating alkylated π-spacers that simultaneously enhance photocurrent density () and suppress dark current density (), leading to high responsivity () and specific detectivity (*).
View Article and Find Full Text PDFACS Nano
September 2025
School of Microelectronics, University of Science and Technology of China, Hefei, Anhui 230026, China.
Superlinear photodetectors hold significant potential in intelligent optical detection systems, such as near-field imaging. However, their current realization imposes stringent requirements on photosensitive materials, thereby limiting the flexibility of the device integration for practical applications. Herein, a tunable superlinear GaO deep-ultraviolet gate-all-around (GAA) phototransistor based on a p-n heterojunction has been proposed.
View Article and Find Full Text PDFACS Omega
September 2025
School of Chemical Engineering, Inner Mongolia Key Laboratory of Theoretical and Computational Chemistry Simulation, Inner Mongolia University of Technology, Hohhot 010051, P. R. China.
The incorporation of transitional elements into silicon or germanium-based semiconductor clusters not only notably improves their structural stability but also endows them with unprecedented multifunctionalities. In this work, the structural, vibrational, and electronic properties for copper-doped silicon and germanium cation clusters Cu (X = Si or Ge, = 6-16) are systematically investigated. The ground-state structures are identified using the PBE0 and mPW2PLYP method combined with a global search technique.
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