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Article Abstract
Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the TiSiC-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746140 | PMC |
| http://dx.doi.org/10.3390/ma15010050 | DOI Listing |
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