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Thickness-dependent magnetic behavior has previously been observed in chemical vapor deposition-grown chromium selenide. However, the low-dimensional structure in nonlayered chromium selenide, which plays a crucial role in determining the low-dimensional magnetic order, needs further study. Here, we report the structure-dependent magnetic properties in monolayer CrSe and CrSe grown by molecular beam epitaxy. In the monolayer CrSe, 1T-CrSe with a lattice constant of 3.3 Å has a metallic character, coexisting with the 1T″ phase with 2 × 2 surface periodicity. Monolayer CrSe can be transformed into CrSe with a lattice constant of 3.6 Å by annealing at 300 °C. X-ray magnetic circular dichroism (XMCD) measurements combined with DFT calculations reveal that while the MBE-grown monolayer CrSe is antiferromagnetic, monolayer CrSe is ferromagnetic with a Curie temperature of ∼200 K. This work demonstrates the structural diversity in nonlayered chromium selenide and the critical effect of different structures on its electronic and magnetic properties.
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http://dx.doi.org/10.1021/acs.jpclett.1c01493 | DOI Listing |
J Colloid Interface Sci
August 2025
Department of Physics, University School of Sciences, Gujarat University, Ahmedabad 380 009, India. Electronic address:
Lithium-oxygen batteries are next-generation battery devices due to lightweight nature and high energy density with compared to conventional Li-ion batteries. These batteries consist a metal anode terminal and an oxygen diffused cathode terminal, in which oxygen is used as a reactant with metal atoms from surrounding air. Nonetheless, these systems facing the problems related to sluggish kinetics and higher overpotential due to formation of insoluble products at negative electrode during redox reaction.
View Article and Find Full Text PDFJ Phys Condens Matter
June 2025
School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China.
Recent breakthroughs in two-dimensional (2D) magnetic materials have unveiled intriguing phenomena in low-dimensional ferromagnetic (FM) systems. However, their integration into spintronic devices faces challenges due to the predominant in-plane (IP) orientation of the easy magnetization axis. Achieving nonvolatile electrical control over magnetic anisotropy in such systems is essential for advancing next-generation spintronic technologies.
View Article and Find Full Text PDFJ Phys Condens Matter
April 2025
Materials Genome Institute, Shanghai University, Shanghai 200444, People's Republic of China.
The discovery of two-dimensional (2D) magnetic materials ushers in the engineering of future magnetoelectric nanodevices and spintronics, however, it is limited by the lack of a material platform with simultaneously large magnetic anisotropy and high transition temperature. Using a recently synthesized CrSemonolayer as a demonstration, the impact on magnetism and electronics is studied via first-principles calculations by functionalizing the monolayer with electron-donating and electron-withdrawing groups namely NHand NO. The magnetic ground state of the CrSechanges from the stripe antiferromagnetic to the ferromagnetic state after functionalization.
View Article and Find Full Text PDFPhys Chem Chem Phys
May 2024
School of Physics and Materials Science, Nanchang University, Nanchang 330031, China.
The valley polarization, induced by the magnetic proximity effect, in monolayer transition metal dichalcogenides (TMDCs), has attracted significant attention due to the intriguing fundamental physics. However, the enhancement and modulation of valley polarization for real device applications is still a challenge. Here, using first-principles calculations we investigate the valley polarization properties of monolayer TMDCs CrS and CrSe and how to enhance the valley polarization by constructing Janus CrSSe (with an internal electric field) and modulate the polarization in CrSSe by applying external electric fields.
View Article and Find Full Text PDFNat Commun
February 2024
Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore, Singapore.
Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe. The lattice-matched MoSe nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe with the formation of MoSe-CrSe heterostructures.
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