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Article Abstract

Recently, a two-dimensional (2D) oxocarbon monolayer, graphether, has been arousing extensive attention owing to its excellent electrical properties. In this work, we calculate the lattice thermal conductivity (k) of graphether and graphene using first-principles calculations and the phonon Boltzmann transport equation. At 300 K, the lattice thermal conductivities of graphether and graphene along the armchair direction are 600.91 W m-1 K-1 and 3544.41 W m-1 K-1, respectively. Moreover, the electron localization function is employed to reveal the origin of the anisotropic k of graphether. Furthermore, the harmonic and anharmonic properties of graphether and graphene are analyzed. We attribute the lower k of graphether to the smaller phonon group velocity and shorter phonon lifetime. Finally, the size effects of phonon transport in graphether and graphene are studied, and the results show that the lattice thermal conductivities are significantly dependent on the system length. The analysis of phonon behaviors in our study contributes to an in-depth understanding of the thermal transport in graphether for the first time, which provides valuable guidelines for graphether-based phonon engineering applications and 2D nanoelectronic devices.

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http://dx.doi.org/10.1039/d0cp03191gDOI Listing

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Article Synopsis
  • A new 2D material called graphether has gained interest because of its impressive electrical properties, prompting researchers to study its thermal conductivity.
  • Calculations show that at 300 K, graphether has a lattice thermal conductivity of 600.91 W m-1 K-1, significantly lower than graphene's 3544.41 W m-1 K-1, primarily due to differences in phonon characteristics.
  • The study highlights how phonon transport properties vary with the size of the material and offers insights for optimizing graphether in future electronic applications.
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Graphether: a two-dimensional oxocarbon as a direct wide-band-gap semiconductor with high mechanical and electrical performances.

Nanoscale

November 2019

Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.

Article Synopsis
  • - The study introduces a new two-dimensional material called graphether, derived from dimethyl ether, which shows excellent stability and a direct wide band gap of 2.39 eV, making it promising for ultraviolet optoelectronic applications.
  • - Graphether’s unique hyperconjugative interactions lead to high intrinsic electron mobility and greater in-plane stiffness than graphene (459.8 N m-1), suggesting enhanced mechanical properties.
  • - The research also notes that replacing carbon-carbon bonds with boron-nitrogen bonds can create a stable variant (Pmn21-BNO) with a higher band gap of 3.32 eV and improved mechanical characteristics in certain directions.
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