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Article Abstract
Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapor deposition grown single-layer and bilayer WS devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (∼10 kΩ μm at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities (∼190 cm V s) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS-indium interface. Our results reveal significant advances toward high-performance WS devices using indium alloy contacts.
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| http://dx.doi.org/10.1021/acsnano.0c05915 | DOI Listing |
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