98%
921
2 minutes
20
2D layered metal-halide perovskites combine efficient exciton radiative recombination in crystal interior with long-distance free-carrier conduction at layer edges, which are promising candidates for realizing high-performance photovoltaic, light-emission and photodetection devices. The anisotropic electrical conductivity in layered perovskites imposes an additional requirement of orientational control for enabling favorable charge transport. However, rational fabrication of single-crystalline nanostructures with pure crystallographic orientation is still elusive. Herein, large-scale pure (101)-orientated 2D-perovskite single-crystalline nanowire arrays are realized by combining solvent engineering with the capillary-bridge lithography technique. Ordered nucleation at liquid-air interface and unidirectional growth along the dewetting direction are demonstrated by fluorescence microscopy and grazing-incidence X-ray scattering in discrete capillary bridges. In consideration of crystal interior exhibiting high resistance arising from the serial insulating organic barriers and ultrafast dissociation of excitons to generate long-lived free carriers at layer edges, ultrasensitive photodetectors are demonstrated with average responsivity exceeding 1.1 × 10 A W and detectivity exceeding 9.1 × 10 Jones.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1002/adma.201905298 | DOI Listing |
Sci Bull (Beijing)
August 2025
Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China. Electronic address:
Determining the number of photons in an incident light pulse at room temperature is the ultimate goal of photodetection. Herein, we report a plasmon-strain-coupled tens of photon level phototransistor by integrating monolayer MoS on top of Au nanowire (NW). Within this structure, Au NW can greatly enhance incident light intensity around MoS, and the large tensile strain can reduce the contact energy barrier between MoS and Au NW, so as to achieve efficient injection of plasmonic hot electrons into MoS.
View Article and Find Full Text PDFVisible-light bandpass field effect phototransistors (FEPTs) with ultrahigh sensitivity and strong wavelength selectivity are fabricated using InGaN/GaN single-carrier superlattices (SCSLs) and polarization-induced depletion. The pure polarization electric field generated at the heterointerface is utilized to deplete the SCSLs, achieving the low dark current leakage with a float photogate. Meanwhile, the SCSLs with well-designed barrier thickness are introduced as the absorber and the channel, which can effectively separate the photoexcited carriers and suppress carrier recombination, thereby contributing to the ultrahigh photocurrent gain.
View Article and Find Full Text PDFAdv Sci (Weinh)
August 2025
Engineering Research Center of IoT Technology Applications (Ministry of Education) School of Integrated Circuits, Jiangnan University, Wuxi, 214122, China.
Conventional top-contact two dimensional (2D) Schottky photodetectors suffer from light shadowing and contact damage, leading to Fermi-level pinning and performance degradation. This work overcomes these limitations by designing a bottom-electrode Schottky photodetector (BE-Schottky PD) based on a Cr/WSe/Au heterostructure. The key innovation involves fabricating the bottom Schottky Cr electrode into pre-etched SiO substrate trenches, making it flush with the surface.
View Article and Find Full Text PDFHigh-performance ultraviolet (UV) photodetectors are critically needed for a wide range of applications. However, simultaneously achieving high sensitivity and fast response speed remains a significant challenge. In this work, we demonstrate the fabrication of a vertical PtSe/4H-SiC van der Waals heterostructure (vdWH) photodiode with an ultrathin AlO interfacial passivation layer for UV detection.
View Article and Find Full Text PDFSmall
August 2025
National Engineering Research Center for Optical Instruments, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310058, P. R. China.
Solar-blind photodetection plays a crucial role in environmental monitoring, corona detection, and covert battlefield communication due to its unique high signal-to-noise ratios in the UVC band. Aluminum quantum dots (AlQDs) emerge as promising optical materials owing to their extended photoresponse in the ultraviolet region, along with their low cost and compatibility with optoelectronic devices. Herein, an AlQDs-based cascade solar-blind photodetector is presented with enhanced sensitivity, achieved through the quantum confinement effect.
View Article and Find Full Text PDF