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Molybdenum disulfide (MoS) field-effect transistor (FET)-based biosensors have attracted significant attention as promising candidates for highly sensitive, label-free biomolecule detection devices. In this paper, toward practical applications of biosensors, we demonstrate reliable and quantitative detection of a prostate cancer biomarker using the MoS FET biosensor in a nonaqueous environment by reducing nonspecific molecular binding events and realizing uniform chemisorption of anti-PSA onto the MoS surface. A systematic and statistical study on the capability of the proposed device is presented, and the biological binding events are directly confirmed and characterized through intensive structural and electrical analysis. Our proposed biosensor can reliably detect various PSA concentrations with a limit of 100 fg/mL. Moreover, rigorous theoretical simulations provide a comprehensive understanding of the operating mechanism of the MoS FET biosensors, and further suggests the enhancement of the sensitivity through engineering device design parameters.
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http://dx.doi.org/10.1021/acsami.7b14479 | DOI Listing |
ACS Appl Mater Interfaces
August 2025
Centre for Optoelectronic Materials and Sensors (COMAS), School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria 3001, Australia.
The stacking orientation of bilayer two-dimensional (2D) materials introduces an additional degree of freedom that can profoundly influence their electronic, optoelectronic, and electrochemical properties. While stacking-engineered phenomena such as ferroelectricity, superconductivity, and second harmonic generation have been widely studied in bilayer molybdenum disulfide (MoS), their impact on functional device performance, particularly photoresponse and electrocatalysis, remains largely unexplored. Here, we investigate how the stacking configuration governs the optoelectronic and electrocatalytic behavior of bilayer MoS, focusing on the two stable stacking orders: 2H and 3R synthesized via chemical vapor deposition (CVD).
View Article and Find Full Text PDFSci Rep
July 2025
Division of Electronic & Semiconductor Engineering, Ewha Womans University, Seoul, 03670, Republic of Korea.
Accurate extraction of mobility parameters in two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) is crucial for evaluating their performance and optimizing device design. Conventional mobility extraction methods such as the field-effect mobility approach suffer from inaccuracies owing to the influence of series resistance and noise amplification. In this paper, we present an advanced polynomial Y-function methodology for the precise mobility characterization of MoS FETs.
View Article and Find Full Text PDFSmall Methods
July 2025
Engineering Science and Mechanics, Penn State University, University Park, State College, PA, 16802, USA.
2D materials, with their atomic-scale thickness and exceptional electronic properties, hold immense potential for advancing transistor technologies beyond silicon's limitations. While large-area growth techniques like metal-organic chemical vapor deposition (MOCVD) enable scalable device fabrication, achieving monolayers with high crystallinity remains challenging. Recently, gold-assisted mechanical exfoliation has emerged as a promising alternative, offering large-area monolayers isolated directly from bulk crystals.
View Article and Find Full Text PDFMicromachines (Basel)
June 2025
High-Power Converter Systems (HLU), Technical University of Munich (TUM), 80333 Munich, Germany.
In this article, the role of downscaling in boosting the sensitivity of a novel label-free DNA sensor based on sub-10 nm dielectric-modulated transition metal dichalcogenide field-effect transistors (DM-TMD FET) is presented through a quantum simulation approach. The computational method is based on self-consistently solving the quantum transport equation coupled with electrostatics under ballistic transport conditions. The concept of dielectric modulation was employed as a label-free biosensing mechanism for detecting neutral DNA molecules.
View Article and Find Full Text PDFNanomaterials (Basel)
June 2025
School of Integrated Circuit, Shenzhen Polytechnic University, Shenzhen 518055, China.
In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode when the device is utilized as a freewheeling diode, eliminating bipolar degradation. The adjustment of SBD position provides an alternative path for reverse conduction and mitigates the electric field distribution near the bottom source trench region.
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