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The optical outputs of single-section quantum-dash and quantum-dot mode-locked lasers (MLLs) are well known to exhibit strong group velocity dispersion. Based on careful measurements of the spectral phase of the pulses from these MLLs, we confirm that the difference in group delay between the modes at either end of the MLL spectrum equals the cavity round-trip time. This observation allows us to deduce an empirical formula relating the accumulated dispersion of the output pulse to the spectral extent and free-spectral range of the MLL. We find excellent agreement with previously reported dispersion measurements of both quantum-dash and quantum-dot MLLs over a wide range of operating conditions.
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http://dx.doi.org/10.1364/OL.41.005676 | DOI Listing |
Micromachines (Basel)
December 2023
Optiwave Systems Inc., 7 Capella Court, Suite 300, Ottawa, ON K1N 6N5, Canada.
We present here a performance comparison of quantum-dash (Qdash) semiconductor amplifiers (SOAs) with three, five, eight, and twelve InAs dash layers grown on InP substrates. Other than the number of Qdash layers, the structures were identical. The eight-layer Qdash SOA gave the highest amplified spontaneous emission power (4.
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January 2022
Chip-scale optical frequency comb sources are ideal compact solutions to generate high speed optical pulses for applications in wavelength division multiplexing (WDM) and high-speed optical signal processing. Our previous studies have concentrated on the use of quantum dash based lasers, but here we present results from an InAs/InP quantum dot (QDot) C-band passively mode-locked laser (MLL) for frequency comb generation. By using this single-section QDot-MLL we demonstrate an aggregate line rate of 12.
View Article and Find Full Text PDFLight Sci Appl
July 2021
LTCI, Institut Polytechnique de Paris, Télécom Paris, 19 place Marguerite Perey, 91120, Palaiseau, France.
Quantum-dot (QD) and quantum-dash (QDash) have been shown to be promising gain materials for lasers directly grown on Si due to their better tolerance to crystal defects and thermal stability. Here we report optically pumped InP-based InAs QDash microdisk lasers (MDLs) directly grown on on-axis (001) Si. To the best of our knowledge, this is the first demonstration of room-temperature continuous-wave lasing of a QDash MDL on Si in the C band and L band.
View Article and Find Full Text PDFCompared to quantum well (QW) lasers, lower dimensional quantum dot (QD) or quantum dash (QDash) devices demonstrate superior performances, owing to their quantized energy levels and increased carrier confinement. Here, we report the systematic comparison of static and dynamic properties of long wavelength (1550 nm) QDash and QW lasers. For the QDash lasers, a higher maximum operating temperature and lower temperature dependence was achieved for long cavities, although the threshold current densities were larger than the QW reference devices.
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