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Article Abstract
Top-contact organic field-effect transistors (OFETs) were fabricated by using a poly-3-hexyl-thiophene (P3HT) active layer. The characteristics of OFETs without and with the light-illumination were investigated. The experimental results indicate that the light has a great influence on the OFETs properties. After the light-illumination, the drain current and carrier mobility were increased, the threshold was decreased, and the on/off ratio was enhanced.
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