Boron-Modified Heterointerface Boosts Kesterite Solar Cells to 0.58 V Open-Circuit Voltage.

Achieving high open-circuit voltage (V) continues to pose a significant challenge for kesterite CuZnSn(S,Se) (CZTSSe) solar cells, predominantly due to the pronounced charge carrier recombination occurring at heterointerface (HEI). To address this issue, an innovative non-metallic boron (B)-modification strategy is developed to optimize the HEI. The key advantages of this strategy are as follows: (i) Leveraging the strong bonding characteristic of B with three valence electrons, the dangling bonds on the absorber surface can be fully saturated, effectively passivating surface states without introducing new defects; (ii) Moreover, diffusion of B into the near-surface region of HEI during selenization process can create weak n-type B donor defects, which lowers the valence band maximum (VBM) of the absorber and mitigates Fermi level pinning.