Spin waves and orbital contribution to ferromagnetism in a topological metal.

Honeycomb and kagome lattices can host propagating excitations with non-trivial topology as defined by their evolution along closed paths in momentum space. Excitations on such lattices can also be momentum-independent, and the associated flat bands are of interest due to strong interactions between heavy quasiparticles. Here, we report the discovery - using circularly polarized X-rays for the unambiguous isolation of magnetic signals - of a nearly flat spin-wave band and large (compared to elemental iron) orbital moment in the metallic ferromagnet FeSn with compact AB-stacked kagome bilayers.

High-performance 4-nm-resolution X-ray tomography using burst ptychography.

Advances in science, medicine and engineering rely on breakthroughs in imaging, particularly for obtaining multiscale, three-dimensional information from functional systems such as integrated circuits or mammalian brains. Achieving this goal often requires combining electron- and photon-based approaches. Whereas electron microscopy provides nanometre resolution through serial, destructive imaging of surface layers, ptychographic X-ray computed tomography offers non-destructive imaging and has recently achieved resolutions down to seven nanometres for a small volume.

EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning.

Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy (STM) has enabled the development of single-atom, quantum-electronic devices on a laboratory scale. Scaling up this technology to mass-produce these devices requires bridging the gap between the precision of STM and the processes used in next-generation semiconductor manufacturing. Here, we demonstrate the ability to remove hydrogen from a monohydride Si(001):H surface using extreme ultraviolet (EUV) light.

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon.

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs have traditionally been extracted from quantum magnetotransport. In principle, the parameters are immediately readable from the one-electron spectral function that can be measured by angle-resolved photoemission spectroscopy (ARPES).

A universal route to efficient non-linear response via Thomson scattering in linear solids.

Non-linear materials are cornerstones of modern optics and electronics. Strong dependence on the intrinsic properties of particular materials, however, inhibits the at-will extension of demanding non-linear effects, especially those second-order ones, to widely adopted centrosymmetric materials (for example, silicon) and technologically important burgeoning spectral domains (for example, terahertz frequencies). Here we introduce a universal route to efficient non-linear responses enabled by exciting non-linear Thomson scattering, a fundamental process in electrodynamics that was known to occur only in relativistic electrons in metamaterial composed of linear materials.

Resistless EUV lithography: Photon-induced oxide patterning on silicon.

In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially hydrogen-terminated silicon surface and assist the growth of an oxide layer, which serves as an etch mask.

charge transport imaging of atomically thin dopant nanostructures in silicon.

Novel approaches to materials design, fabrication processes and device architectures have accelerated next-generation electronics component production, pushing device dimensions down to the nano- and atomic-scale. For device metrology methods to keep up with these developments, they should not only measure the relevant electrical parameters at these length-scales, but ideally do so during active operation of the device. Here, we demonstrate such a capability using the full functionality of an advanced scanning microwave/scanning capacitance/kelvin probe atomic force microscope to inspect the charge transport and performance of an atomically thin buried phosphorus wire device during electrical operation.

A perfect X-ray beam splitter and its applications to time-domain interferometry and quantum optics exploiting free-electron lasers.

X-ray free-electron lasers (FELs) deliver ultrabright X-ray pulses, but not the sequences of phase-coherent pulses required for time-domain interferometry and control of quantum states. For conventional split-and-delay schemes to produce such sequences, the challenge stems from extreme stability requirements when splitting Ångstrom wavelength beams, where the tiniest path-length differences introduce phase jitter. We describe an FEL mode based on selective electron-bunch degradation and transverse beam shaping in the accelerator, combined with a self-seeded photon emission scheme.

Highly efficient THz four-wave mixing in doped silicon.

Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χL (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χL in the THz domain that is higher than that reported for any other material in any wavelength band.

Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces.

The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces.

Proof-of-concept analytical instrument for label-free optical deconvolution of protein species in a mixture.

The adoption of process analytical technologies by the biopharmaceutical industry can reduce the cost of therapeutic drugs and facilitate investigation of new bioprocesses. Control of critical process parameters to retain critical product quality attributes within strict bounds is important for ensuring a consistently high product quality, but developing the sophisticated analytical technologies required has proven to be a major challenge. Here, we demonstrate a new optical technique for continuous monitoring of protein species as they are eluted from a chromatographic column, even when they fully co-elute with other protein species, without making any assumption about or peak-fitting to the elution profile.

Testing of asymptomatic individuals for fast feedback-control of COVID-19 pandemic.

We argue that frequent sampling of the fraction of a priori non-symptomatic but infectious humans (either by random or cohort testing) significantly improves the management of the COVID-19 pandemic, when compared to intervention strategies relying on data from symptomatic cases only. This is because such sampling measures the incidence of the disease, the key variable controlled by restrictive measures, and thus anticipates the load on the healthcare system due to progression of the disease. The frequent testing of non-symptomatic infectiousness will (i) significantly improve the predictability of the pandemic, (ii) allow informed and optimized decisions on how to modify restrictive measures, with shorter delay times than the present ones, and (iii) enable the real-time assessment of the efficiency of new means to reduce transmission rates.

Taking advantage of multiplet structure for lineshape analysis in Fourier space.

Lineshape analysis is a recurrent and often computationally intensive task in optics, even more so for multiple peaks in the presence of noise. We demonstrate an algorithm which takes advantage of peak multiplicity (N) to retrieve line shape information. The method is exemplified via analysis of Lorentzian and Gaussian contributions to individual lineshapes for a practical spectroscopic measurement, and benefits from a linear increase in sensitivity with the number N.

Load-induced dynamical transitions at graphene interfaces.

The structural superlubricity (SSL), a state of near-zero friction between two contacted solid surfaces, has been attracting rapidly increasing research interest since it was realized in microscale graphite in 2012. An obvious question concerns the implications of SSL for micro- and nanoscale devices such as actuators. The simplest actuators are based on the application of a normal load; here we show that this leads to remarkable dynamical phenomena in microscale graphite mesas.

LamNI - an instrument for X-ray scanning microscopy in laminography geometry.

Across all branches of science, medicine and engineering, high-resolution microscopy is required to understand functionality. Although optical methods have been developed to `defeat' the diffraction limit and produce 3D images, and electrons have proven ever more useful in creating pictures of small objects or thin sections, so far there is no substitute for X-ray microscopy in providing multiscale 3D images of objects with a single instrument and minimal labeling and preparation. A powerful technique proven to continuously access length scales from 10 nm to 10 µm is ptychographic X-ray computed tomography, which, on account of the orthogonality of the tomographic rotation axis to the illuminating beam, still has the limitation of necessitating pillar-shaped samples of small (ca 10 µm) diameter.

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure.

Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties.

Giant non-linear susceptibility of hydrogenic donors in silicon and germanium.

Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals. Here, we derive the equivalent technique for hydrogenic impurities in multi-valley semiconductors. While the absorption has useful applications, it is primarily a loss process; conversely, the non-linear susceptibility is a crucial parameter for active photonic devices.

Virus lasers for biological detection.

The selective amplification of DNA in the polymerase chain reaction is used to exponentially increase the signal in molecular diagnostics for nucleic acids, but there are no analogous techniques for signal enhancement in clinical tests for proteins or cells. Instead, the signal from affinity-based measurements of these biomolecules depends linearly on the probe concentration. Substituting antibody-based probes tagged for fluorescent quantification with lasing detection probes would create a new platform for biomarker quantification based on optical rather than enzymatic amplification.

Nondestructive imaging of atomically thin nanostructures buried in silicon.

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography.

Self-Assembled Molecular Nanowires for High-Performance Organic Transistors.

While organic semiconductors provide tantalizing possibilities for low-cost, light-weight, flexible electronic devices, their current use in transistors-the fundamental building block-is rather limited as their speed and reliability are not competitive with those of their inorganic counterparts and are simply too poor for many practical applications. Through self-assembly, highly ordered nanostructures can be prepared that have more competitive transport characteristics; however, no simple, scalable method has been discovered that can produce devices on the basis of such nanostructures. Here, we show how transistors of self-assembled molecular nanowires can be fabricated using a scalable, gradient sublimation technique, which have dramatically improved characteristics compared to those of their thin-film counterparts, both in terms of performance and stability.

High-resolution non-destructive three-dimensional imaging of integrated circuits.

Modern nanoelectronics has advanced to a point at which it is impossible to image entire devices and their interconnections non-destructively because of their small feature sizes and the complex three-dimensional structures resulting from their integration on a chip. This metrology gap implies a lack of direct feedback between design and manufacturing processes, and hampers quality control during production, shipment and use. Here we demonstrate that X-ray ptychography-a high-resolution coherent diffractive imaging technique-can create three-dimensional images of integrated circuits of known and unknown designs with a lateral resolution in all directions down to 14.

Surface mediated cooperative interactions of drugs enhance mechanical forces for antibiotic action.

The alarming increase of pathogenic bacteria that are resistant to multiple antibiotics is now recognized as a major health issue fuelling demand for new drugs. Bacterial resistance is often caused by molecular changes at the bacterial surface, which alter the nature of specific drug-target interactions. Here, we identify a novel mechanism by which drug-target interactions in resistant bacteria can be enhanced.

Optical diffraction for measurements of nano-mechanical bending.

We explore and exploit diffraction effects that have been previously neglected when modelling optical measurement techniques for the bending of micro-mechanical transducers such as cantilevers for atomic force microscopy. The illumination of a cantilever edge causes an asymmetric diffraction pattern at the photo-detector affecting the calibration of the measured signal in the popular optical beam deflection technique (OBDT). The conditions that avoid such detection artefacts conflict with the use of smaller cantilevers.