Ultrathin ferroic HfO-ZrO superlattice gate stack for advanced transistors.

With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. This led to a fundamental change in the gate stack in 2008, the incorporation of high-dielectric-constant HfO (ref. ), which remains the material of choice to date.

Stable Subloop Behavior in Ferroelectric Si-Doped HfO.

The recent demand for analogue devices for neuromorphic applications requires modulation of multiple nonvolatile states. Ferroelectricity with multiple polarization states enables neuromorphic applications with various architectures. However, deterministic control of ferroelectric polarization states with conventional ferroelectric materials has been met with accessibility issues.

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO.

The ferroelectricity in ultrathin HfO offers a viable alternative to ferroelectric memory. A reliable switching behavior is required for commercial applications; however, many intriguing features of this material have not been resolved. Herein, we report an increase in the remnant polarization after electric field cycling, known as the "wake-up" effect, in terms of the change in the polarization-switching dynamics of a Si-doped HfO thin film.

A tactile sensor using single layer graphene for surface texture recognition.

Tactile sensors capable of texture recognition are essential for artificial skin functions. In this work, we describe a tactile sensor with a single sensor architecture made of single layer graphene that can recognize surface texture based on the roughness of the interacting surface. Resistance changes due to the local deformation of a local area of the single layer graphene are reflected in the resistance of the entire sensor.

Electric Characteristics of the Carbon Nanotube Network Transistor with Directly Grown ZnO Nanoparticles.

We report on the electrical characteristics of field effect transistors fabricated with random networks of single-walled carbon nanotubes with surfaces modified by ZnO nanoparticles. ZnO nanoparticles are directly grown on single-walled carbon nanotubes by atomic layer deposition using diethylzinc (DEZ) and water. Electrical observations show that ZnO nanoparticles act as charge transfer sources that provide electrons to the nanotube channel.

Interfacial magnetic anisotropy of Co90Zr10 on Pt layer.

Spin Transfer Torque (STT) is of great interest in data writing scheme for the Magneto-resistive Random Access Memory (MRAM) using Magnetic Tunnel Junction (MTJ). Scalability for high density memory requires ferromagnetic electrodes having the perpendicular magnetic easy axis. We investigated CoZr as the ferromagnetic electrode.