Giant unilateral electric-field control of magnetic anisotropy in MgO/RhCoSb heterojunctions.

A large voltage-controlled magnetic anisotropy (VCMA) effect is highly desirable for applications of voltage-torque magnetic random access memory. In this work, the dependence of magnetic anisotropy (MA) on the electric field in a MgO-based heterojunction consisting of a new Heusler alloy, RhCoSb, is studied using first-principles calculations. We find that the Rh-terminated MgO/RhCoSb heterojunction has a perpendicular MA and a giant VCMA coefficient of 7024 fJ V m.

Large perpendicular magnetic anisotropy of transition metal dimers driven by polarization switching of a two-dimensional ferroelectric InSe substrate.

Large perpendicular magnetic anisotropy (MA) is highly desirable for realizing atomic-scale magnetic data storage which represents the ultimate limit of the density of magnetic recording. In this work, we study the MA of transition metal dimers Co-Os, Co-Co and Os-Os adsorbed on two-dimensional ferroelectric InSe (InSe-CoOs, InSe-OsCo, InSe-CoCo and InSe-OsOs) using first-principles calculations. We find that the Co-Os dimer in InSe-CoOs has a total magnetic anisotropy energy (MAE) of ∼40 meV.

Vertical-orbital band center as an activity descriptor for hydrogen evolution reaction on single-atom-anchored 2D catalysts.

The d-band center descriptor based on the adsorption strength of adsorbate has been widely used in understanding and predicting the catalytic activity in various metal catalysts. However, its applicability is unsure for the single-atom-anchored two-dimensional (2D) catalysts. Here, taking the hydrogen (H) adsorption on the single-atom-anchored 2D basal plane as example, we examine the influence of orbitals interaction on the bond strength of hydrogen adsorption.