Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
Despite excellent efficiency and stability achieved in regular single-unit quantum dot light-emitting diodes (QLEDs), regular tandem QLEDs still suffer from limited device performance, lagging far behind the inverted tandem QLEDs. Here, novel regular tandem QLEDs are demonstrated with an ultrathin (≈4 nm) indium tin oxide (ITO) charge generation layer (CGL). Through systematic optimization of charge injection balance and light out-coupling efficiency, the resulting tandem QLEDs can exhibit a record-breaking EQE of 51.2%, an exceptional T lifetime of ≈31383 h (at 1000 cd m), and an ultralow turn-on voltage of 2.8 V, which represent the highest performance metrics reported to date for regular tandem QLEDs. Thanks to the fast response of this tandem device (≈4.8 µs), the first-ever fabricated 8 × 8 passive-matrix displays can present flicker-free images with either fixed color or dynamically transitioning colors at a stable brightness, demonstrating that the achievable color display capability and driving scheme of QLED displays can be expanded by using the tandem architecture. It is believed the results will significantly promote the development of regular tandem QLEDs, which will lead to unprecedented improvements in device efficiency and stability, accelerating their application in next-generation displays and lighting.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/adma.202508173 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Regular Tandem Quantum Dot Light-Emitting Diodes with over 51% External Quantum Efficiency for Next-Generation Displays.
Adv Mater
August 2025
Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, and School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China.
Despite excellent efficiency and stability achieved in regular single-unit quantum dot light-emitting diodes (QLEDs), regular tandem QLEDs still suffer from limited device performance, lagging far behind the inverted tandem QLEDs. Here, novel regular tandem QLEDs are demonstrated with an ultrathin (≈4 nm) indium tin oxide (ITO) charge generation layer (CGL). Through systematic optimization of charge injection balance and light out-coupling efficiency, the resulting tandem QLEDs can exhibit a record-breaking EQE of 51.
View Article and Find Full Text PDFFace-to-face integrated tandem quantum-dot LEDs with high performance and multifunctionality.
Light Sci Appl
April 2025
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
The realization of solution-processed tandem quantum-dot LEDs (QLEDs) remains a technical challenge due to the limitations of inefficient interconnect layer and the damage caused by multiple solution processes. Here, we develop a high performance tandem QLED by face-to-face integrating a top-emitting QLED with a transparent QLED. The top and bottom units can be addressed independently, thereby enabling the tandem QLED to operate in series, parallel, and color-tunable modes for multifunctionality.
View Article and Find Full Text PDFVery Stable and Efficient Tandem Quantum-Dot Light-Emitting Diodes Enabled by IZO-Based Interconnecting Layers.
Nano Lett
June 2024
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
Theoretically, tandem quantum-dot light-emitting diodes (QLEDs) hold great promise for achieving both high efficiency and high stability in display applications. However, in practice, their operational stability remains considerably inferior to that of state-of-the-art devices. In this study, we developed a new tandem structure with optimal electrical and optical performance to simultaneously improve the efficiency and stability of tandem QLEDs.
View Article and Find Full Text PDFHigh-Performance Tandem Quantum-Dot Light-Emitting Diodes Based on Bulk-Heterojunction-Like Charge-Generation Layers.
Adv Mater
June 2024
Key Lab of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, China.
In this study, the fundamental but previously overlooked factors of charge generation efficiency and light extraction efficiency (LEE) are explored and collaboratively optimized in tandem quantum-dot light-emitting diodes (QLEDs). By spontaneously forming a microstructured interface, a bulk-heterojunction-like charge-generation layer composed of a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ZnO bilayer is fabricated and an ideal charge-generation efficiency surpassing 115% is obtained. The coupling strength of the waveguide mode for the top unit and the plasmon polariton loss for the bottom unit are highly suppressed using precise thickness control, which increases the LEE of the tandem devices.
View Article and Find Full Text PDF220 V/50 Hz Compatible Bipolar Quantum-Dot Light-Emitting Diodes.
Adv Mater
April 2024
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China.
Alternating current (AC)-driven quantum-dot light-emitting diodes (QLEDs) are superior to direct current-driven QLEDs because they can be directly integrated into household AC electricity and have high stability. However, achieving high-performance AC-driven QLEDs remains challenging. In this work, a bipolar QLED with coplanar electrodes is realized by horizontally connecting a regular QLED and an inverted QLED in series using an Al bridging layer.
View Article and Find Full Text PDF