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Article Abstract
Gallium oxide (), with its ultra-wide bandgap of 4.9 eV, excellent thermal stability, and availability in large native substrates, is an ideal material for solar-blind ultraviolet (UV) detection. In this study, we present a high-performance gate-all-around (GAA) phototransistor based on a p-NiO/n- heterojunction, specifically designed for advanced UV detection applications. The incorporation of p-NiO as the gate material provides a strong built-in electric field, which significantly improves carrier separation, suppresses dark current, and enhances the overall photoresponse. The constructed GAA phototransistor exhibits superior optoelectronic properties, including a responsivity of 8.64×10/, an external quantum efficiency of 4.23×10, a detectivity of 9.92×10 Jones, and rise/fall times both of 5 µs. Comprehensive simulation and experimental analyses reveal that the enhanced performance stems from the favorable type-II band alignment at the / interface, which facilitates efficient photocarrier generation and transport. This work not only establishes a pathway for developing high-sensitivity and fast-response UV photodetectors but also lays the foundation for further advancements in solar-blind optoelectronics for environmental monitoring, space exploration, and other critical applications.
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Gallium oxide (), with its ultra-wide bandgap of 4.9 eV, excellent thermal stability, and availability in large native substrates, is an ideal material for solar-blind ultraviolet (UV) detection. In this study, we present a high-performance gate-all-around (GAA) phototransistor based on a p-NiO/n- heterojunction, specifically designed for advanced UV detection applications.
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