Linearly Programmable Oxygen-Doped MoS Memtransistor for Neuromorphic Computing.

The investigation of two-dimensional material memtransistors based on surface defect dynamics modulation holds significant importance for the development of efficient artificial heterosynaptic and advanced bionic systems. Thus, reported herein is an interfacial control technology that combines inert-atmosphere thermal annealing with low-temperature ultraviolet ozone doping. Employing this method enables efficient p-type doping of MoS with mild and low damage, and the constructed four-terminal heterosynaptic memtransistor exhibits high switching ratio and linearly programmable memristive switching characteristics. Here, in situ observations of controlled oxygen incorporation and oxygen vacancy migration in the MoS channel region using electron microscopy and in situ spectroscopy reveal a valence-change mechanism dominated by dynamic ion migration. Notably, the lateral two-dimensional (2D) bottom-gate device architecture enables this heterosynaptic device to exhibit short-term and long-term synaptic plasticity and brain-inspired associative memory in response to optical and electrical stimuli with gate tunability learn. In addition, the designed hardware-level bionic visual-haptic system successfully realizes the self-denoising function of 28 × 28 pixel images and the recognition accuracy of up to 97.6%. The excellent performance of photo- and electric-heterosynaptic makes them exhibit superior capabilities in efficient neuromorphic computing, which provides a good paradigm for realizing efficient and complex neuromorphic electronics.