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One-dimensional (1D) perovskites have garnered significant interest due to their structural stability and self-trapped emission, with Sn-based and Pb-based perovskites being the primary focus. However, the reasons underlying the similarities and differences in the luminescent properties of these two types of perovskites remain unexplored in a systematic manner. Moreover, their properties can be influenced by external factors such as humidity, temperature, and illumination, which may induce subtle lattice expansions or contractions. In this study, we employ density functional theory (DFT) calculations to systematically investigate the similarities and differences in the optical properties and structural stability of 1D perovskites (CNH)PbBr and (CNH)SnBr, as well as the effects of strain on these materials. Our results reveal that the molecular dissociation energy is higher for Pb-based perovskites than for their Sn-based counterparts, and both systems show increasing dissociation energies under greater lattice size. Under strain conditions, both the absorption and emission energies show a regular variation. This trend is more pronounced in Sn-based perovskites, whose optical characteristics are more sensitive to strain, indicating a higher degree of tunability. This enhanced sensitivity is attributed to the more active lone-pair electrons in Sn-based perovskites, inducing stronger lattice distortions and electron-phonon coupling. Furthermore, strain engineering can effectively modify the carrier mobility, optical absorption, and transition dipole moment of 1D perovskite materials, enabling improvements in both phosphor-based luminescence and electroluminescent applications.
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http://dx.doi.org/10.1039/d5cp00619h | DOI Listing |
J Chem Phys
September 2025
Quantum Chemistry Division, Yokohama City University, Seto 22-2, Kanazawa-Ku, Yokohama 236-0027, Kanagawa, Japan.
Perovskite-silicon tandem solar cells have attracted considerable attention owing to their high power conversion efficiency (PCE), which exceeds the limits of single-junction devices. This study focused on lead-free tin-based perovskites with iodine-bromine mixed anions. Bromide perovskites have a wide bandgap; therefore, they are promising light absorbers for perovskite-silicon tandem solar cells.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Department of Applied Chemistry and Institute of Molecular Science, National Yang Ming Chiao Tung University, 1001 Ta-Hsueh Rd, Hsinchu 300093, Taiwan.
The two-step sequential deposition technique reported in the inverted p-i-n configuration to fabricate Sn perovskite solar cells fails in the TiO-based n-i-p configuration since the latter aggravates Sn oxidation from the SnI nucleation layer upon pore infiltration. However, ambipolar SnO only promotes hole transport in Sn perovskite. Here, we report Cl-doped SnO (Cl:SnO) with surface functionalities using multifunctional polybenzoxazine (p-Benz) to circumvent the SnO/SnI interfacial redox reaction that would otherwise amplify hole extraction.
View Article and Find Full Text PDFThe significant limitations of stability and toxicity pose a substantial barrier to the practical application of lead-based perovskite solar cells. In the pursuit of environmentally sustainable and lead-free materials for the development of high-performance perovskite solar cells, this investigation assesses the theoretical feasibility of , a tin-based inorganic perovskite, as a potential cornerstone for commercially successful perovskite solar cell technology. An investigation into charge transport materials and their thicknesses, absorber properties and defect densities, metal contacts, operating temperature, and both series and shunt resistances led to the realization of novel, to our knowledge, //// configuration through the solar cell capacitance simulator in one-dimension (SCAPS-1D).
View Article and Find Full Text PDFNat Commun
August 2025
Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, Republic of Korea.
Mitigating the oxidation susceptibility of Sn remains a critical issue for improving the environmental stability of lead-free perovskites. Herein, we show that the oxidized surface layer of Sn-based perovskites can be utilized to improve transistor performance, rather than being entirely suppressed. We report perovskite-IGZO junction field-effect transistors that use this oxidized layer to suppress gate current to below 10 A, enabling enhancement-mode operation.
View Article and Find Full Text PDFNat Chem
September 2025
Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Zero-dimensional (0D) metal halides, which feature discrete metal halide octahedra interspersed with large organoammonium cations, are the building blocks of halide perovskites. The optical properties of these materials make them promising candidates in light-emitting devices. However, developing their general design principles remains challenging.
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