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Article Abstract
Conductive metal-organic frameworks (C-MOFs) are crucial electronic materials owing to their distinctive structures and intrinsic conductivities. C-MOF thin films enhance device integration, charge transfer, and the overall performance. The interface-assisted method has been proven to be effective for preparing high-quality thin films of C-MOFs. In this review, we outline various interface-assisted methods for preparing C-MOF thin films, including gas-liquid (G-L), liquid-liquid (L-L), and liquid-solid (L-S) interfaces, expound the growth mechanism of the interface-assisted method, introduce the applications of C-MOF thin films in electronic devices, and outline the development of the interface-assisted preparation of C-MOF membrane/films, pointing out potential challenges they may face.
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