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Altermagnets (AMs) are a new class of magnetic materials that combine the beneficial spintronics properties of ferromagnets and antiferromagnets, garnering significant attention recently. Here, we have identified altermagnetism in a layered intercalated transition metal diselenide, CoNbSe, which crystallizes with an ordered sublattice of intercalated Co atoms between NbSe layers. Single crystals are synthesized, and the structural characterizations are performed using single crystal diffraction and scanning tunneling microscopy. Magnetic measurements reveal easy-axis antiferromagnetism below 168 K. Density functional theory (DFT) calculations indicate that A-type antiferromagnetic ordering with easy-axis spin direction is the ground state, which is verified through single crystal neutron diffraction experiments. Electronic band structure calculations in this magnetic state display spin-split bands, confirming altermagnetism in this compound. The layered structure of CoNbSe presents a promising platform for testing various predicted properties associated with altermagnetism.
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http://dx.doi.org/10.1038/s41467-025-58642-4 | DOI Listing |
Nano Lett
September 2025
Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia.
We report the emergence of an uncharted phenomenon, termed -wave polarization-spin locking (PSL), in two-dimensional (2D) altermagnets. This phenomenon arises from nontrivial Berry connections, resulting in perpendicular electronic polarizations in the spin-up and spin-down channels. Symmetry-protected -wave PSL occurs exclusively in -wave altermagnets with tetragonal layer groups.
View Article and Find Full Text PDFNat Commun
May 2025
Department of Physics and Astronomy, University of Notre Dame, Notre Dame, IN, USA.
Altermagnets (AMs) are a new class of magnetic materials that combine the beneficial spintronics properties of ferromagnets and antiferromagnets, garnering significant attention recently. Here, we have identified altermagnetism in a layered intercalated transition metal diselenide, CoNbSe, which crystallizes with an ordered sublattice of intercalated Co atoms between NbSe layers. Single crystals are synthesized, and the structural characterizations are performed using single crystal diffraction and scanning tunneling microscopy.
View Article and Find Full Text PDFPhys Rev Lett
April 2025
Hefei National Laboratory, Hefei, Anhui 230088, China.
An altermagnet is a newly discovered antiferromagnet, characterized by unique anisotropic spin-split energy bands. It has attracted tremendous interest because of its promising potential in information storage and processing. However, measuring the distinctive spin-split energy bands arising from altermagnetism remains a challenge.
View Article and Find Full Text PDFNano Lett
April 2025
Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China.
As an emerging magnetic phase, altermagnets with compensated magnetic order and nonrelativistic spin-splitting have attracted widespread attention. Currently, strain engineering is considered to be an effective method for inducing valley polarization in altermagnets; however, achieving controllable switching of valley polarization is extremely challenging. Herein, combined with the tight-binding model and first-principles calculations, we propose that interlayer sliding can be used to successfully induce and effectively manipulate the large valley polarization in altermagnets.
View Article and Find Full Text PDFMater Horiz
March 2025
Science, Mathematics and Technology (SMT) Cluster, Singapore University of Technology and Design, Singapore, 487372, Singapore.
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current in an altermagnetic bilayer. Such a bilayer system can host layer-spin locking, in which one layer hosts a spin-polarized current while the other layer hosts a current with opposite spin polarization.
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