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The near-infrared photodetection of monolayer MoS can be achieved using upconverted nanoparticles (UCNPs). Herein, we demonstrated that gold nanorods (Au NRs) further enhanced the near-infrared photoresponsivity of a hybrid device via the surface plasmon enhancement of the localized field. We synthesized a three-layer device comprising Au NRs, UCNPs (NaYF:Yb, Er), and monolayer MoS, and examined its photoelectric characteristics using laser irradiation with varying power densities at 980 nm, the excitation wavelength of UCNPs. Compared with a device without Au NRs, the photoelectric response of the three-layer device was greatly improved at 5 V bias, and photoresponsivity was increased at visible wavelengths (450, 532, and 635 nm). This study contributes to the knowledge of two-dimensional materials for the development of hybrid photoelectronic devices.
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http://dx.doi.org/10.3390/ijms26083480 | DOI Listing |
ACS Nano
September 2025
College of Physics, Donghua University, Shanghai 201620, China.
Broadband anisotropic photodetectors show great promise for polarization-sensitive imaging and multispectral optoelectronic systems yet face critical challenges in material anisotropy modulation and broadband sensitivity. Weyl semimetals exhibit giant optical anisotropy and tunable heterojunction band alignment, enabling high-performance anisotropic photodetection. Herein, ultrabroadband PDs based on the NbNiTe (niobium nickel telluride), enabled by antenna integration and heterostructure engineering, achieve high sensitivity from visible to Terahertz (THz).
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2025
School of Materials Science and Engineering, Xiangtan University, Hunan Xiangtan 411105, China.
Two-dimensional (2D) vertical heterojunctions, characterized by atomic-scale van der Waals interfaces that facilitate efficient vertical charge transport, offer a promising architecture for integrating self-powered photodetectors (sense) with neuromorphic synapses (think) to achieve an integrated sense-think functionality. However, the interface-induced opposing electric fields and limited spectral response restrict their development. In this study, we address these limitations through a graphene (Gr)/WSe/Ag vertical heterojunction architecture.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China.
Graphene heralded a new era in optoelectronic research and prospective multifunctional devices. Here, we demonstrate uncooled ultraviolet to mid-infrared multifunctional photodetectors based on monolayer graphene on a Pb[(MgNb)Ti]O (PMNPT) substrate, with capabilities in photodetection, memory, and signal processing. Using weak broad-spectral light, photoexcited holes in graphene are attracted by the stable spontaneous polarization within the PMNPT, inducing a gate tunable giant photogating effect.
View Article and Find Full Text PDFSmall Sci
August 2025
Department of Chemistry KU Leuven Celestijnenlaan 200F Heverlee 3001 Belgium.
Semiconductor materials capable of broadband photodetection, spanning X-rays to near-infrared (NIR), are essential for applications in medical imaging, industrial inspection, security, and telecommunications. Conventional photodetectors like Si, Ge, InGaAs, and amorphous Se (a-Se) often encounter tradeoffs in efficiency or cost-effectiveness. Halide perovskites (HPs) offer competitive or superior optoelectronic properties with low-cost, solution-based processing.
View Article and Find Full Text PDFAdv Mater
August 2025
Department of Physics, Pusan National University, Busan, 46241, Republic of Korea.
1D and 2D integrations provide significant promise for machine vision by enabling compact, power-efficient optoelectronic devices. However, the potential of 1D materials in mixed-dimensional structures for convolutional image processing remains largely unexplored. Here, high-quality 1D-NbPdSe is synthesized and integrated with 2D-WSe to form self-powered photodetectors, exhibiting gate-tunable bi-directional photoresponse for image processing.
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