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Article Abstract
Atomic layer deposition-grown beryllium oxide (BeO) is gaining attention as a dielectric material that can minimize device power consumption because of its high dielectric constant, high thermal conductivity, and low leakage current enabled by its wide bandgap energy. In this study, the impact of BeO dielectrics on InSnZnO (ITZO) thin-film transistors (TFTs) was investigated, revealing that adding a hafnium dioxide (HfO) layer can enhance electrical performance and bias stress reliability. Time-of-flight secondary-ion mass spectrometry and X-ray photoelectron spectroscopy confirmed that the single-BeO dielectric-based ITZO TFTs exhibited a low mobility of 27.6 cm/V·s due to Be migration and demonstrated abnormal threshold voltage () shifts under bias stress. Conversely, the HfO 20 nm/BeO hetero-dielectric ITZO TFTs exhibited a high mobility of 76.6 cm/V·s and enhanced abnormal shift characteristics. Therefore, these results demonstrate that our high-performance HfO/BeO hetero-dielectric-based ITZO TFTs could be utilized in back-end-of-line devices for monolithic three-dimensional memory technologies.
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Article Synopsis
- Amorphous oxide semiconductors, like InSnZnO, are gaining popularity for use in flat-panel displays and advanced 3D integration.
- A study focused on creating high-performance thin-film transistors (TFTs) from these materials, fabricating them at only 200 °C.
- Key findings showed that reducing film thickness increases the optical bandgap and significantly enhances electrical performance, making these ITZO TFTs suitable for future transparent electronics.