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In-line multi-wavelength non-destructive pharma quality monitoring with ultrabroadband carbon nanotubes photo-thermoelectric imaging scanners.

Light Sci Appl

September 2025

Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan.

While non-destructive in-line monitoring at manufacturing sites is essential for safe distribution cycles of pharmaceuticals, efforts are still insufficient to develop analytical systems for detailed dynamic visualisation of foreign substances and material composition in target pills. Although spectroscopies, expected towards pharma testing, have faced technical challenges in in-line setups for bulky equipment housing, this work demonstrates compact dynamic photo-monitoring systems by selectively extracting informative irradiation-wavelengths from comprehensive optical references of target pills. This work develops a non-destructive in-line dynamic inspection system for pharma agent pills with carbon nanotube (CNT) photo-thermoelectric imagers and the associated ultrabroadband sub-terahertz (THz)-infrared (IR) multi-wavelength monitoring.

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The Electronic Structure of Palladium on Magnetoelectric CrO(0001).

J Phys Condens Matter

September 2025

Department of Physics and Astronomy and Center for Materials Research and Analysis, University of Nebraska-Lincoln, Jorgensen Hall, 855 North 16th Str., NE 68588-0299, Lincoln, Nebraska, 68588-0007, UNITED STATES.

The band structure of ultrathin Pd(111) thin films grown on the CrO(0001) surface was studied by angular-resolved photoemission spectroscopy (ARPES) combined with first-principles calculations. The CrO(0001) interface and the expanded Pd lattice constant appears to significantly affect the occupied band structure of an ultrathin palladium film. A characteristic band splitting is seen in the experimental occupied electronic structure, forming a hexagonal pattern approximately half-way from the Γ" point to the surface Brillouin zone boundary.

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Bandgap-Tailored (BiSb)Se Thin Films Enabling Fast Broadband Near-Infrared Photodetection and Imaging.

Small

September 2025

Institute of Thin Film Physics and Applications, Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physic

Antimony selenide (SbSe), a narrow-bandgap semiconductor with strong light absorption, exhibits photoresponse up to ≈1050 nm due to its intrinsic 1.15 eV bandgap. To extend detection into the near-infrared (NIR, 700-1350 nm), Bi-alloyed (BiSb)Se is developed via vacuum sputtering and postselenization.

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A new family of nanostructured ternary intermetallic compounds - named the ZIP phases - is introduced in this work. The ZIP phases exhibit dualistic atomic ordering, i.e.

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Wafer-scale integration of monolayer MoS residue-free support layer etching and angular strain suppression.

Nanoscale

September 2025

Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.

A crack-free and residue-free transfer technique for large-area, atomically-thin 2D transition metal dichalcogenides (TMDCs) such as MoS and WS is critical for their integration into next-generation electronic devices, either as channel materials replacing silicon or as back-end-of-line (BEOL) components in 3D-integrated nano-systems on CMOS platforms. However, cracks are frequently observed during the debonding of TMDCs from their growth substrates, and polymer or metal residues are often left behind after the removal of adhesive support layers wet etching. These issues stem from excessive angular strain accumulated during debonding and the incomplete removal of support layers due to their low solubility.

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