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Epithelial cell adhesion molecule (EpCAM) was considered to be an important marker of multiple tumors, and its high expression is closely related to the early diagnosis and treatment of tumors. At present, metal oxide semiconductors have become a key component of biosensor and bioelectronics technology. Tin oxide shows great potential for development because of its nontoxic, nonpolluting, low price, and excellent electrical properties. In this study, a novel SnO solution-gated thin film transistor (SGTFT) biosensor for the specific detection of EpCAM was successfully developed using SnO film prepared by the sol-gel method as the channel material. By selecting the optimal thickness of 100 nm SnO film as the channel material, the transconductance value () reached 1432 μS, and the threshold voltage () remained stable at 0.288 V. In order to achieve qualitative and quantitative detection of EpCAM, SnO films were subjected to a specific chemical treatment to fix the aptamer. Through a specific recognition between the aptamer and EpCAM, the gate voltage changes were triggered to regulate the channel current of the device. FE-SEM, EIS, XPS, and electrical performance tests were employed to track and measure the modification process. Based on the optimizations described above, the prepared SGTFT exhibited high detection sensitivity (14.6 mV·dec), the limit of detection (LOD) down to 24.4 pg/mL, and the calibration curves in the range of 0.02 ng/mL-500 ng/mL for EpCAM sensing. The developed SnO-SGTFT biosensor is anticipated to provide a new highly sensitive and specific detection platform for health monitoring and disease diagnosis.
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http://dx.doi.org/10.1021/acssensors.4c03073 | DOI Listing |
ACS Sens
February 2025
Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
Epithelial cell adhesion molecule (EpCAM) was considered to be an important marker of multiple tumors, and its high expression is closely related to the early diagnosis and treatment of tumors. At present, metal oxide semiconductors have become a key component of biosensor and bioelectronics technology. Tin oxide shows great potential for development because of its nontoxic, nonpolluting, low price, and excellent electrical properties.
View Article and Find Full Text PDFMikrochim Acta
July 2024
Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan, 430062, China.
Langmuir
March 2023
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
Our solution-gated indium tin oxide (ITO)-based thin-film transistor (TFT) produced by single-step sputtering has great future potential in bioelectronics. In particular, chemical modifications of the ITO channel surface are expected to contribute to biomolecular recognition with ultrahigh sensitivity owing to a remarkably steep subthreshold slope (SS). In this study, we investigate the effect of a chemical modification of an aptamer as a receptor molecule at the ITO channel surface on the electrical characteristics of the solution-gated TFT.
View Article and Find Full Text PDFACS Appl Nano Mater
October 2022
Department of Electrical & Computer Engineering, Duke University, Durham, North Carolina 27708, United States.
Interest in point-of-care diagnostics has led to increasing demand for the development of nanomaterial-based electronic biosensors such as biosensor field-effect transistors (BioFETs) due to their inherent simplicity, sensitivity, and scalability. The utility of BioFETs, which use electrical transduction to detect biological signals, is directly dependent upon their electrical stability in detection-relevant environments. BioFET device structures vary substantially, especially in electrode passivation modalities.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2021
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
In this paper, we propose a one-step procedure for fabricating a solution-gated ultrathin channel indium tin oxide (ITO)-based field-effect transistor (FET) biosensor, thus providing an ″all-by-ITO″ technology. A thin-film sheet was placed on both ends of a metal shadow mask, which were contacted with a glass substrate. That is, the bottom of the metal shadow mask corresponding to the channel was slightly raised from the substrate, resulting in the creeping of some particles into the gap during sputtering.
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