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In this study, a group of aluminum-doped lithium iron phosphate (LFP) with varying dopant concentrations (Li Al FePO/C, where = 0.01-0.03) was synthesized via a solid-state reaction. Comprehensive analysis revealed that the aluminum dopant was uniformly distributed across the crystals of the synthesized samples. Notably, minor doping ( ≤ 0.01) helped reduce the formation of antisite defects within the LFP structure, lowering the defect content to 1.67% compared to 2.04% in undoped LFP. Further examination corroborated the presence of antisite defects and confirmed their reduced concentration in aluminum-doped LFP. Electrochemically, LAFP01 with = 0.01 (or 1% aluminum doping) demonstrated an increased lithium-ion diffusion coefficient and superior electrochemical performance, achieving a discharge capacity of 155.6 mA h/g at a 0.1 C rate and surpassing that of undoped LFP. The performance improvement was more evident under rapid charge and discharge conditions, where LAFP01 maintained a higher specific capacity (86 mA h/g compared to 78 mA h/g for undoped LFP) at a current density of 5 C or greater. This study suggests that the reduced antisite defects with small aluminum doping could potentially contribute to the improved electrochemical characteristics of LFP cathodes, offering insights into enhancing lithium-ion battery performance and managing aluminum impurities in battery recycling processes.
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http://dx.doi.org/10.1021/acsomega.4c08870 | DOI Listing |
Phys Chem Chem Phys
September 2025
School of Petrochemical Engineering, Liaoning Petrochemical University, Fushun, 113001, China.
GeSi compounds are promising for next-generation optoelectronic applications because of their tuneable bandgap and high carrier mobility, but surface point defects can significantly alter their electronic and optical properties. Using first-principles density functional theory calculations, the effects of vacancies, interstitials, and antisite defects in GeSi are systematically examined in this study. The results reveal that vacancies and interstitials introduce mid-gap states, narrowing the bandgap and enhancing absorption, whereas antisite defects cause subtle performance change.
View Article and Find Full Text PDFRSC Adv
August 2025
Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology Dhaka 1205 Bangladesh
The advent of graphene catalyzed extensive exploration into two-dimensional (2D) materials, owing to their extraordinary electronic, mechanical, and optical properties. Among these, two-dimensional silicon carbide (2D-SiC) has emerged as a compelling candidate for next-generation optoelectronic devices due to its inherent planar structure, robust mechanical strength, high exciton binding energy, high thermal stability, and wide band gap. In this work, we present a comprehensive first-principles investigation into the effects of intrinsic point defects including vacancies and antisites as well as substitutional doping with various single foreign atom (, As, Bi, Ga, Ge, In, P, Pb, Sb, Sn, Te, Ca, K, Mg) on the electronic and optical properties of 2D-SiC.
View Article and Find Full Text PDFACS Nano
August 2025
Key Laboratory for High Efficiency Energy Conversion Science and Technology of Henan Province, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, P. R. China.
NaMnTi(PO) (NMTP) represents an attractive cathode candidate for sodium-ion batteries, providing a low-cost and high-safety solution for energy storage systems. However, Mn residing in the Na vacancy seriously hinders Na transportation, which significantly impedes NMTP from achieving the theoretical specific capacity. Herein, we introduce a cation gap-filling strategy via excess sodium incorporation to effectively suppress the Mn occupation at Na sites, thereby increasing the Na vacancy concentration and promoting rapid Na diffusion kinetics.
View Article and Find Full Text PDFNanomaterials (Basel)
July 2025
Aenerx-Technology Co., Ltd., Hangzhou 311121, China.
A wide-bandgap AgInGaSe (AIGS) thin film was fabricated using molecular beam epitaxy (MBE) via a three-stage method. The influence of Selenium (Se) pressure on the properties of AIGS films and solar cells was studied in detail. It was found that Se pressure played a very important role during the fabrication process, whereby Se pressure was varied from 0.
View Article and Find Full Text PDFJ Am Chem Soc
August 2025
Yusuf Hamied Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, U.K.
Lithium nickel oxide, LiNiO (LNO), and its doped derivatives are promising battery cathode materials with high gravimetric capacity and operating voltages. They are also of interest to the field of quantum magnetism due to the presumed = 1/2 triangular lattice and associated geometric frustration. However, the tendency for Li/Ni substitutional defects and off-stoichiometry makes fundamental studies challenging.
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