Asymmetric bi-level dual-core mode converter for high-efficiency and polarization-insensitive O-band fiber-chip edge coupling: breaking the critical size limitation.

Nanophotonics

State Key Laboratory for Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Center for Optical & Electromagnetic Research, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou 310058, China.

Published: September 2024


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Article Abstract

Efficient coupling between optical fibers and on-chip photonic waveguides has long been a crucial issue for photonic chips used in various applications. Edge couplers (ECs) based on an inverse taper have seen widespread utilization due to their intrinsic broadband operation. However, it still remains a big challenge to realize polarization-insensitive low-loss ECs working at the O-band (1,260-1,360 nm), mainly due to the strong polarization dependence of the mode coupling/conversion and the difficulty to fabricate the taper tip with an ultra-small feature size. In this paper, a high-efficiency and polarization-insensitive O-band EC is proposed and demonstrated with great advantages that is fully compatible with the current 130-nm-node fabrication processes. By introducing an asymmetric bi-level dual-core mode converter, the fundamental mode confined in the thick core is evanescently coupled to that in the thin core, which has an expanded mode size matched well with the fiber and works well for both TE/TM-polarizations. Particularly, no bi-level junction in the propagation direction is introduced between the thick and thin waveguide sections, thereby breaking the critical limitation of ultra-small feature sizes. The calculated coupling loss is 0.44-0.56/0.48-0.61 dB across the O-band, while achieving 1-dB bandwidths exceeding 340/230 nm for the TE/TM-polarization modes. For the fabricated ECs, the peak coupling loss is ∼0.82 dB with a polarization dependent loss of ∼0.31 dB at the O-band when coupled to a fiber with a mode field diameter of 4 μm. It is expected that this coupling scheme promisingly provides a general solution even for other material platforms, e.g., lithium niobate, silicon nitride and so on.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11501050PMC
http://dx.doi.org/10.1515/nanoph-2024-0320DOI Listing

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Asymmetric bi-level dual-core mode converter for high-efficiency and polarization-insensitive O-band fiber-chip edge coupling: breaking the critical size limitation.

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