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Article Abstract
High spin polarization and low resistivity of FeO at room temperature have been an appealing topic in spintronics with various promising applications. High-quality FeO thin films are a must to achieve the goals. In this report, FeO films on different substrates (SiO/Si(100), MgO(100), and MgO/Ta/SiO/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The morphological, structural, and magnetic properties of the deposited samples were characterized with atomic force microscopy, X-ray diffractometry, and vibrating sample magnetometry. The polycrystalline FeO film grown on MgO/Ta/SiO/Si(100) presented very interesting morphology and structure characteristics. More importantly, changes in grain size and structure due to the effect of the MgO/Ta buffering layers have a strong impact on saturation magnetization and coercivity of FeO thin films compared to cases of no or just a single buffering layer.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11496724 | PMC |
| http://dx.doi.org/10.3762/bjnano.15.101 | DOI Listing |
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