Role of growth temperature on microstructural and electronic properties of rapid thermally grown MoTethin film for infrared detection.

In the field of electronic and optoelectronic applications, two-dimensional materials are found to be promising candidates for futuristic devices. For the detection of infrared (IR) light, MoTepossesses an appropriate bandgap for which p-MoTe/n-Si heterojunctions are well suited for photodetectors. In this study, a rapid thermal technique is used to grow MoTethin films on silicon (Si) substrates. Molybdenum (Mo) thin films are deposited using a sputtering system on the Si substrate and tellurium (Te) film is deposited on the Mo film by a thermal evaporation technique. The substrates with Mo/Te thin films are kept in a face-to-face manner inside the rapid thermal-processing furnace. The growth is carried out at a base pressure of 2 torr with a flow of 160 sccm of argon gas at different temperatures ranging from 400 °C to 700 °C. The x-ray diffraction peaks appear around 2= 12.8°, 25.5°, 39.2°, and 53.2° corresponding to (002), (004), (006), and (008) orientation of a hexagonal 2H-MoTestructure. The characteristic Raman peaks of MoTe, observed at ∼119 cmand ∼172 cm, correspond to the in-plane Eand out-of-plane Amodes of MoTe, whereas the prominent peaks of the in-plane Emode at ∼234 cmand the out-of-plane Bmode at ∼289 cmare also observed. Root mean square (RMS) roughness is found to increase with increasing growth temperature. The bandgap of MoTeis calculated using a Tauc plot and is found to be 0.90 eV. Electrical characterizations are carried out using current-voltage and current-time measurement, where the maximum responsivity and detectivity are found to be 127.37 mA Wand 85.21 × 10Jones for a growth temperature of 600 °C and an IR wavelength illumination of 1060 nm.