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Article Abstract
Se-free n-type (Bi,Sb)Te thermoelectric materials, outperforming traditional n-type Bi(Te,Se), emerge as a compelling candidate for practical applications of recovering low-grade waste heat. A 100% improvement in the maximum of n-type BiSbTe is demonstrated by using melt-spinning and excess Te-assisted transient liquid phase sintering (LPS). Te-rich sintering promotes the formation of intrinsic defects (Te), elevating the carrier concentration and enhancing the electrical conductivity. Melt-spinning with excess Te fine-tunes the electronic band, resulting in a high power-factor of 0.35 × 10 W·m K at 300 K. Rapid volume change during sintering induces the formation of dislocation networks, significantly suppressing the lattice thermal conductivity (0.4 W·m K). The developed n-type legs achieve a high maximum of 1.0 at 450 K resulting in a 70% improvement in the output power of the thermoelectric device (7.7 W at a temperature difference of 250 K). This work highlights the synergy between melt-spinning and transient LPS, advancing the tailored control of both electronic and thermal properties in thermoelectric technology.
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