Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and excellent on-off switching behavior in the front channel of our oxide-oxide heterostructure. Similarly, for an additional oxide layer, we have selected IZO due to its outstanding electrical properties. The optimized optoelectronic characteristics of the IGZO/IZO phototransistors were identified by adjusting the ratio of In:Zn in the IZO layer. As a result, the most remarkable traits were observed at the ratio of In:Zn = 8:2. Compared to the IGZO single-layer phototransistor, the IGZO/IZO(8:2) phototransistor showed improved photoresponse characteristics, with photosensitivity and photoresponsivity values of 1.00 × 10 and 89.1 AW, respectively, under visible light wavelength illumination. Moreover, the electrical characteristics of the IGZO/IZO(8:2) transistor, such as field effect mobility () and current on/off ratio (/), were highly enhanced compared to the IGZO transistor. The and / were increased by about 2.1 times and 2.3 times, respectively, compared to the IGZO transistor. This work provides an approach for fabricating visible-light phototransistors with elevated optoelectronic properties and low power consumption based on an oxide-oxide heterostructure. The phototransistor with improved performance can be applied to applications such as color-selective visible-light image sensors and biometric sensors interacting with human-machine interfaces.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10856061 | PMC |
| http://dx.doi.org/10.3390/ma17030677 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Enhancement of On-Current and Reliability in InGaZnO Thin-Film Transistors for Synaptic Circuit Applications through Gate Insulator Stack Engineering.
ACS Appl Mater Interfaces
September 2025
Department of Material Sciences and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
A nanometer-scale multilayer gate insulator (GI) engineering strategy is introduced to simultaneously enhance the on-current and bias stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs). Atomic layer deposition supercycle modifications employ alternating layers of AlO, TiO, and SiO to optimize the gate-oxide stack. Each GI material is strategically selected for complementary functionalities: AlO improves the interfacial quality at both the GI/semiconductor and GI/metal interfaces, thereby enhancing device stability and performance; TiO increases the overall dielectric constant; and SiO suppresses leakage current by serving as a high-energy barrier between AlO and TiO.
View Article and Find Full Text PDFChip-Scale Graphene/IGZO Cold Source FET Array Enabling Sub-60 mV dec Super-Steep Subthreshold Swing.
Adv Mater
September 2025
Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea.
In this study, the first sub-60 mV dec super-steep subthreshold swing (SS) of graphene/InGaZnO (IGZO) cold-source field-effect transistor (CSFET) arrays is demonstrated. The linear density of states of the Dirac-cone-type graphene suppresses the Boltzmann thermal tail near the graphene/IGZO interface which in turn causes super-exponentially decaying electron density with increasing energy, leading to an extremely low off current and SS value. In particular, by introducing an HfO high-k dielectric with a low body factor, the surface potential is effectively modulated, further reducing SS by ≈46.
View Article and Find Full Text PDFSelective DUV Femtosecond Laser Annealing for Electrical Property Modulation in NMOS Inverter.
Nanomaterials (Basel)
August 2025
Department of Semiconductor Engineering, Gachon University, Seongnam City 13120, Republic of Korea.
Amorphous indium gallium zinc oxide (a-IGZO) is widely used as an oxide semiconductor in the electronics industry due to its low leakage current and high field-effect mobility. However, a-IGZO suffers from notable limitations, including crystallization at temperatures above 600 °C and the high cost of indium. To address these issues, nitrogen-doped zinc oxynitride (ZnON), which can be processed at room temperature, has been proposed.
View Article and Find Full Text PDFToward Understanding Temperature and Bias Instabilities of Anti-ambipolar Transistors via Low-Frequency Noise Spectroscopy.
Small
June 2025
Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.
Anti-ambipolar transistors (AATs) featuring heterojunctions of n- and p-type semiconductors have garnered significant research interest owing to their unique electrical characteristics. With the nonlinear current response, AATs hold great promise for a wide range of next-generation electronic applications, further enhancing advanced logic and in-memory computing functionality. However, the seamless integration of AATs into these applications hinges upon addressing their susceptibility to temperature and bias instabilities, a challenge that has yet to be systematically explored.
View Article and Find Full Text PDFCO Conversion to Methanol by Hydrogen Species on n-Type Oxide Semiconductors.
J Am Chem Soc
July 2025
MDX Research Center for Element Strategy, Institute of Science Tokyo, Yokohama 226-8501, Japan.
An n-type amorphous indium-based oxide semiconductor, a-InGaZnO (a-IGZO), was found to be a promising catalyst for CO hydrogenation to methanol. The oxide obtained from the mixed-hydroxide gel proved to be a unique n-type semiconductor material with a large surface area of more than 100 m/g and a high carrier electron concentration of approximately 10/cm. Incorporating a metal/semiconductor junction with 5 wt % Pd significantly enhanced catalytic performance, achieving a reaction rate more than 20 times higher and a methanol selectivity exceeding 90 mol %.
View Article and Find Full Text PDF