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The sol-gel process for fabricating electrochromic thin films is straightforward, offering advantages such as low cost and ease of compositional control. Herein we prepared GO-Bi-WO films with improved electrochromic performance using a simple sol-gel spin-coating method. The sample shows a fast-switching time (1.8 s for coloring and 1.8 s for bleaching), large optical modulation (85% at 630 nm), excellent stability (86.4% retention after 10 200 cycles), and high coloration efficiency (65.9 cm C). This work indicates the electrochromic performance of WO-based films can be enhanced by incorporating GO, which provides an effective strategy for the rapid, safe, and efficient fabrication of electrochromic thin films.
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http://dx.doi.org/10.1039/d3dt03805j | DOI Listing |
Micromachines (Basel)
July 2025
School of Electrical Engineering and Intelligent Manufacturing, Chongqing Metropolitan College of Science and Technology, Chongqing 402167, China.
Vertical GaN P-i-N diodes exhibit excellent high-voltage performance, fast switching speed, and low conduction losses, making them highly attractive for power applications. However, their breakdown voltage is severely constrained by electric field crowding at device edges. Using silvaco tcad (2019) tools, this work systematically evaluates multiple edge termination techniques, including deep-etched mesa, beveled mesa, and field-plate configurations with both vertical and inclined mesa structures.
View Article and Find Full Text PDFPhys Rev E
July 2025
Dalian University of Technology, School of Computer Science and Technology, Dalian 116024, People's Republic of China.
In practical applications, complex networks often model scenarios involving higher-order relationships, for which hypergraphs offer a suitable representation. This paper introduces synchronizability metrics to study the synchronization of a temporal two-layer multiplex hypergraph, where temporal characteristics are captured by time-evolving incidence matrix. By transforming hyperedges into maximal cliques, we construct a temporally evolving weighted network that reproduces the dynamics on the hypergraph under simple structure and symmetric coupling.
View Article and Find Full Text PDFACS Nano
August 2025
School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China.
Low-dimensional nanomaterials hold great promise for on-chip light-emitting applications and are expected to profoundly influence the evolution of next-generation photonic chips. Currently, microlasers and light-emitting diodes represent the predominant on-chip integrated light sources. Exploring how to employ low-dimensional materials to realize more miniaturized and controllable light sources remains a key research focus over the past decade.
View Article and Find Full Text PDFJ Phys Chem Lett
August 2025
Department of Applied Chemistry, College of Life Sciences, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan.
We report a new photochromic phenoxyl imidazolyl radical complex (PIC) that exhibits reversible homolytic C-O bond cleavage upon UV light irradiation. Ultrafast transient absorption spectroscopy revealed pronounced spectral evolution on nanosecond time scales, reflecting rotational isomerization between two open form isomers. Time-resolved infrared absorption measurements confirmed their biradical character and supported the presence of both isomers in thermodynamic equilibrium.
View Article and Find Full Text PDFNanomaterials (Basel)
July 2025
State Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China.
Organic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7'-dibenzo [c, h] acridine]-5'-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated. From the characterization of the 10% SFDBAO/PS based on ONVM, a sterically hindered small-molecule SFDBAO with rigid orthogonal configuration and a donor-acceptor (D-A) structure as a molecular-scale charge storage element demonstrated significantly higher charge trapping ability than other small-molecule materials such as C and Alq. The ONVM based on 10% SFDBAO/PS presents ambipolar memory behaviors with a wide memory window (146 V), a fast-switching speed (20 ms), an excellent retention time (over 5 × 10 s), and stable reversibility (36 cycles without any noticeable decay).
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