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Van der Waals interactions with transition metal dichalcogenides were shown to induce strong spin-orbit coupling (SOC) in graphene, offering great promises to combine large experimental flexibility of graphene with unique tuning capabilities of the SOC. Here, we probe SOC-driven band splitting and electron dynamics in graphene on WSe by measuring ballistic transverse magnetic focusing. We found a clear splitting in the first focusing peak whose evolution in charge density and magnetic field is well reproduced by calculations using the SOC strength of ~ 13 meV, and no splitting in the second peak that indicates stronger Rashba SOC. Possible suppression of electron-electron scatterings was found in temperature dependence measurement. Further, we found that Shubnikov-de Haas oscillations exhibit a weaker band splitting, suggesting that it probes different electron dynamics, calling for a new theory. Our study demonstrates an interesting possibility to exploit ballistic electron motion pronounced in graphene for emerging spin-orbitronics.
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http://dx.doi.org/10.1038/s41467-023-41826-1 | DOI Listing |
Adv Mater
August 2025
State Key Laboratory of New Ceramic Materials, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
2D semiconductors open new avenues in the post-Moore era for semiconductor technologies immune from the short-channel effect due to their atomic-scale thicknesses and dangling-bond-free surfaces. However, it still remains a big challenge to obtain large-area and high-quality monolayer p-type semiconductors so far. Herein, a controlled nucleation is realized by tuning the evaporation areas of Se precursors during the p-type WSe growth.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2025
School of Materials Science and Engineering, Xiangtan University, Hunan Xiangtan 411105, China.
Two-dimensional (2D) vertical heterojunctions, characterized by atomic-scale van der Waals interfaces that facilitate efficient vertical charge transport, offer a promising architecture for integrating self-powered photodetectors (sense) with neuromorphic synapses (think) to achieve an integrated sense-think functionality. However, the interface-induced opposing electric fields and limited spectral response restrict their development. In this study, we address these limitations through a graphene (Gr)/WSe/Ag vertical heterojunction architecture.
View Article and Find Full Text PDFNanoscale
August 2025
Department of Materials, Imperial College London, London SW7 2AZ, UK.
The integration of graphene with other 2D materials has been extensively studied over the past decade to realize high-performance devices unattainable with single materials. Graphene-transition metal dichalcogenides (TMDCs) such as MoS, WS, MoSe, and WSe vertical heterostructures have demonstrated promise in numerous electronic and optoelectronic applications due to the wide bandgap range and strong light-matter interaction in TMDCs, and the ability to form electrostatically tunable junctions with graphene. However, conventional methods for TMDCs growth, including chemical vapor deposition (CVD), electrodeposition, and atomic layer deposition (ALD), require high temperatures, which can degrade graphene's electrical and structural properties.
View Article and Find Full Text PDFJ Phys Chem Lett
September 2025
State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China.
In recent years, two-dimensional (2D) materials, owing to their exceptional optical and electrical properties, unique structural characteristics, and superior photoelectric performance, have been extensively utilized in the development of self-powered photodetectors. Bandgap engineering in graphene-based photodetectors, coupled with atomically thin charge extraction channels in vertical architectures, boosts carrier transport and lowers potential barriers, while type III heterojunctions further enhance performance via band tunneling, interlayer transitions, and efficient photocarrier separation. Here, we investigate the performance of a Gr/WSe/SnSe-based type III heterojunction self-powered photodetector.
View Article and Find Full Text PDFPhys Rev Lett
August 2025
Seoul National University, Seoul National University, Department of Physics and Astronomy, Seoul 08826, Korea and Center for Theoretical Physics, Seoul 08826, Korea.
We present a conceptually simple and technically straightforward method for calculating photoelectron wave functions that is easily integrable with standard wave-function-based density-functional-theory packages. Our method is based on the Lippmann-Schwinger equation, naturally incorporating the boundary condition that the final photoelectron state must satisfy. The calculated results are in good agreement with the measured photon-energy and polarization dependence of the angle-resolved photoemission spectroscopy (ARPES) of graphene, the photon-energy-dependent evolution of the so-called dark corridor arising from the pseudospin, and WSe_{2}, the circular dichroism reflecting the hidden orbital polarization.
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