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Computational algorithms have facilitated the miniaturization of spectrometers, which is essential for on-chip and portable applications. A plasmonic Schottky photodetector provides a filter-free and CMOS-compatible scheme for spectral measurement. In this study, we report on a direct-detected spectral analysis based on an integrated vertically coupled plasmonic nanostructure Schottky photodetector. We demonstrate that the plasmonic Schottky photodetector has a fast response with a -3 dB bandwidth of 600 kHz and a high peak detectivity of 8.65 × 10 Jones. By designing a deep neural network (DNN), we demonstrate the reconstruction of the unknown spectrum with a mean square error (MSE) of 1.57 × 10 at a broad operating wave band of 450-950 nm, using only 20 distinct devices. Moreover, the spectral resolution of the 20 devices can reach to 7 nm. These findings provide a promising route for the development of chip-integrated spectrometers with high spectral accuracy and optical performance.
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http://dx.doi.org/10.1364/OL.502048 | DOI Listing |
ACS Nano
September 2025
School of Microelectronics, Hefei University of Technology, Hefei 230009, China.
Near-infrared (NIR) narrowband photodetectors, featuring high sensitivity, excellent wavelength selectivity, and narrow full width at half-maximum (fwhm), enable efficient detection of specific NIR wavelengths and are widely used in optical communication, environmental monitoring, spectroscopy, and scientific research. In this study, we present a self-powered NIR photodetector based on a silicon nanowire (SiNW) array, exhibiting an ultranarrowband response centered at 1120 nm. The device employs a simple Schottky junction architecture.
View Article and Find Full Text PDFUsing Density Functional Theory (DFT) calculations, we explored the electronic band structure and contact type (Schottky and Ohmic) at the interface of VS-BGaX (X = S, Se) metal-semiconductor (MS) van der Waals heterostructures (vdWHs). The thermal and dynamical stabilities of the investigated systems were systematically validated using energy-strain analysis, molecular dynamics (AIMD) simulations, as well as binding energy and phonon spectrum calculations. After analyzing the band structure, VS-BGaX (X = S, Se) MS vdWHs metallic behavior with type-III band alignment is revealed.
View Article and Find Full Text PDFSmall
August 2025
Key Laboratory of Light Field Manipulation and System Integration Applications in Fujian Province, College of Physics and Information Engineering, Minnan Normal University, Zhangzhou, 363000, China.
2D transition metal dichalcogenide WSe exhibits unique band structure tunability, and its van der Waals heterostructures with 3D semiconductors demonstrate significant potential for high-performance photodetection. However, inherent limitations (interface defects) in conventional thin-film transfer hinder their development. This study addresses interfacial defects and integration challenges in WSe-based 2D-3D heterojunction devices by proposing a GeSi diffusion barrier-mediated interfacial engineering strategy combined with dual-temperature-zone furnace-based in situ selenization, achieving controllable growth of high-quality WSe films on GeSi/Ge substrates.
View Article and Find Full Text PDFWe propose and theoretically investigate what we believe to be a novel side-illuminated graphene Schottky photodetector (SIGS-PD) integrated on an InP waveguide platform suitable for the telecommunication wavelength of 1.55 µm. Multiple graphene layers (from monolayer to five layers) are positioned to absorb the transverse magnetic (TM) mode, with an InP substrate forming a Schottky junction to enable electrical connectivity and carrier separation.
View Article and Find Full Text PDFUltraviolet photodetectors (UV-PDs) with high sensitivity and fast optical response have become an important part of modern optoelectronic information transmission and communication systems. In this paper, a high-performance self-powered titanium carbide ()/gallium nitride (GaN) Schottky UV-PD with an interdigitated electrode was developed. A Schottky-contacted interdigitated electrode was successfully fabricated on GaN substrates using a spray coating method.
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