98%
921
2 minutes
20
Forming semiconductor heterojunctions is a promising strategy to boost the efficiency of solar-driven photoelectrochemical (PEC) water splitting by accelerating the separation and transport of photogenerated charge carriers via an interfacial electric field. However, there is limited research considering the influence of electrolytes on the band alignment of the heterojunction under PEC conditions. In this work, we use a single crystal NiCoO/SrTiO (NCO/STO) heterojunction with atomic-precision controlled thickness as a model photoelectrode to study the band structure modulations upon getting in contact with the electrolyte and the correlation with the PEC activity. It is found that the band alignment can be tuned by the control of p-n heterojunction film thickness and regulated by the water redox potential (). When the Fermi level () of the heterojunction is higher/lower than the , the band bending at the NCO/STO-electrolyte interface will increase/decrease after contacting with the electrolyte. However, when the band bending width of the NCO layer is thinner than its thickness, the electrolyte will not influence the band alignment at the NCO/STO interface. In addition, PEC characterization results show that the 1 nm NCO/STO heterojunction photoanode exhibits superior water-splitting performance, owing to the optimum band structure of the p-n heterojunction and the shorter charge transfer distance.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1021/acsami.3c02783 | DOI Listing |
J Surg Case Rep
September 2025
Department of Orthopaedics and Sports Medicine, University at Buffalo, 462 Grider Street, Buffalo, NY 14215, United States.
An 8-year-old girl fell onto her outstretched arm, sustaining proximal ulna and radial neck fractures. After closed reduction and casting in the emergency department, radiographs showed improved alignment but limited bony detail. A CT scan performed 3 days later demonstrated 18° apex-medial angulation of the radial neck, slight radiocapitellar subluxation, and subtle calcification near the trochlear notch, concerning intra-articular injury.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
School of Biomedical Engineering, Shenzhen University Medical School, Shenzhen University, Shenzhen, Guangdong518055, China.
The rapid development of liquid exfoliation technology has boosted fundamental research and applications of ultrathin two-dimensional (2D) materials. However, the small-sized exfoliated 2D materials with a high specific surface area may exhibit poor chemical stability. Understanding the stability of 2D crystals will be significant for their preservation and service and for the development of new stable phases via the spontaneous transition from unstable structures.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Center for Graphene Research and Innovation, University of Mississippi, University, Mississippi 38677, United States.
To assess the efficacy of a mixed-dimensional van der Waals (vdW) heterostructure in modulating the optoelectronic responses of nanodevices, the charge transport properties of the transition-metal dichalcogenide (TMD)-based heterostructure comprising zero-dimensional (0D) WS quantum dots (QDs) and two-dimensional (2D) MoS flakes are critically analyzed. Herein, a facile strategy was materialized in developing an atomically thin phototransistor assembled from mechanically exfoliated MoS and WS QDs synthesized using a one-pot hydrothermal route. The amalgamated photodetectors exhibited a high responsivity of ∼8000 A/W at an incident power of 0.
View Article and Find Full Text PDFDiscov Nano
September 2025
School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China.
Surface-enhanced Raman spectroscopy (SERS) by 2D semiconductors relies on chemical (CM) enhancement driven by charge-transfer (CT) processes in bandgap alignment between molecules and substrates. Unfortunately, the low light absorption and weak conferment in the atomic-layer material limit the enhancement factor of Raman intensity (EFRI). Improving the utilization efficiency of excitation light is therefore essential for promoting SERS performance of 2D semiconductors.
View Article and Find Full Text PDFUsing Density Functional Theory (DFT) calculations, we explored the electronic band structure and contact type (Schottky and Ohmic) at the interface of VS-BGaX (X = S, Se) metal-semiconductor (MS) van der Waals heterostructures (vdWHs). The thermal and dynamical stabilities of the investigated systems were systematically validated using energy-strain analysis, molecular dynamics (AIMD) simulations, as well as binding energy and phonon spectrum calculations. After analyzing the band structure, VS-BGaX (X = S, Se) MS vdWHs metallic behavior with type-III band alignment is revealed.
View Article and Find Full Text PDF