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Surface acoustic wave (SAW) resonators based on aluminum nitride (AlN)/scandium-doped AlN (ScAlN) composite thin films with dual reflection structures demonstrate substantial improvement in acoustic performance. In this work, the factors affecting the final electrical performance of SAW are analyzed from the aspects of piezoelectric thin film, device structure design, and fabrication process. AlN/ScAlN composite films can effectively solve the problem of abnormal grains of ScAlN, improve the crystal orientation, and reduce the intrinsic loss and etching defects. The double acoustic reflection structure of the grating and groove reflector can not only reflect the acoustic wave more thoroughly, but also helps to release the film stress. Both structures are beneficial to obtain a higher Q value. The new stack and design results in large Q and figure of merit among SAW devices working at 446.47 MHz on silicon up to 8241 and 18.1, respectively.
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http://dx.doi.org/10.1109/TUFFC.2023.3247902 | DOI Listing |
Micromachines (Basel)
April 2025
Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Taiyuan 030051, China.
An innovative design of a hydrophone based on a piezoelectric composite film of AlN/Sc0.2Al0.8N is presented.
View Article and Find Full Text PDFIEEE Trans Ultrason Ferroelectr Freq Control
October 2023
Surface acoustic wave (SAW) resonators based on aluminum nitride (AlN)/scandium-doped AlN (ScAlN) composite thin films with dual reflection structures demonstrate substantial improvement in acoustic performance. In this work, the factors affecting the final electrical performance of SAW are analyzed from the aspects of piezoelectric thin film, device structure design, and fabrication process. AlN/ScAlN composite films can effectively solve the problem of abnormal grains of ScAlN, improve the crystal orientation, and reduce the intrinsic loss and etching defects.
View Article and Find Full Text PDFMicromachines (Basel)
February 2023
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.
Piezoelectric aluminum nitride (AlN) thin film, as a commonly used material for high-frequency acoustic resonators, has been a research hotspot in the RF field. Doping Sc elements in AlN is one of most effective methods to improve the piezoelectricity of the material. In this work, the first principal calculation and Mori-Tanaka model are used to obtain the piezoelectric constants of AlN, ScAlN, and AlN/ScAlN composites.
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