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The market for flexible, hybrid, and printed electronic systems, which can appear in everything from sensors and wearables to displays and lighting, is still uncertain. What is clear is that these systems are appearing every day, enabling devices and systems that can, in the near future, be crumpled up and tucked in our pockets. Within this context, cellulose-based modified nanopapers were developed to serve both as a physical support and a gate dielectric layer in field-effect transistors (FETs) that are fully recyclable. It was found that the impregnation of those nanopapers with sodium (Na) ions allows for low operating voltage FETs (<3 V), with mobility above 10 cm V s, current modulation surpassing 10, and an improved dynamic response. Thus, it was possible to implement those transistors into simple circuits such as inverters, reaching a clear discrimination between logic states. Besides the overall improvement in electrical performance, these devices have shown to be an interesting alternative for reliable, sustainable, and flexible electronics, maintaining proper operation even under stress conditions.
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http://dx.doi.org/10.1021/acsami.2c20486 | DOI Listing |
ACS Appl Mater Interfaces
September 2025
Department of Material Sciences and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
A nanometer-scale multilayer gate insulator (GI) engineering strategy is introduced to simultaneously enhance the on-current and bias stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs). Atomic layer deposition supercycle modifications employ alternating layers of AlO, TiO, and SiO to optimize the gate-oxide stack. Each GI material is strategically selected for complementary functionalities: AlO improves the interfacial quality at both the GI/semiconductor and GI/metal interfaces, thereby enhancing device stability and performance; TiO increases the overall dielectric constant; and SiO suppresses leakage current by serving as a high-energy barrier between AlO and TiO.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Department of Engineering "Enzo Ferrari", University of Modena and Reggio Emilia, Via P. Vivarelli 10, Modena 41121, Italy.
We combine experiments and simulations to investigate the degradation dynamics and dielectric breakdown (BD) of SiO/HfO gate stacks irradiated with varying doses of 40 MeV carbon ions. The analysis of postirradiation electrical characteristics (current-voltage, -, capacitance-voltage, -, and conductance-voltage, -) reveals that the HfO layer is the most affected by irradiation-induced damage, leading to the formation of defects consistent with oxygen vacancies. Postirradiation constant voltage stress (CVS) experiments reveal an inverse dependence of time to breakdown () and Weibull slopes (β) on the irradiation dose.
View Article and Find Full Text PDFNat Commun
August 2025
Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, China.
Hexagonal boron nitride (hBN) nanosheets have become the most promising candidates as gate dielectric and insulating substrates for two-dimensional (2D) material-based electronic and optoelectronic devices. While mechanical stress in hBN nanosheets is often either intrinsically or intentionally introduced for 2D material-based devices during device fabrication and operation, the dielectric strength of hBN nanosheets under mechanical stress is still elusive. In this work, the dielectric strength of hBN nanosheets in a metal/hBN/metal structure is systematically studied when mechanical stress normal to nanosheets is applied.
View Article and Find Full Text PDFNat Commun
August 2025
Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics, Peking University, Beijing, China.
Pressure sensors, especially the typical capacitive sensors that feature low power consumption, have drawn considerable interest in emerging and rapidly growing fields such as flexible electronics and humanoid robots, but often suffer from limited performance. Here, we report a contact-dominated design for capacitive pressure sensors to dramatically improve the sensing response and linearity over a broad pressure range. This design is implemented by utilizing hierarchical microstructured electrodes made of robust conductive composites with metallic coverage and layered dielectrics with high unit-area capacitance to realize localized electric-displacement-field-enhanced capacitance change.
View Article and Find Full Text PDFMicromachines (Basel)
July 2025
Department of Engineering "Enzo Ferrari", Università di Modena e Reggio Emilia, 41125 Modena, Italy.
In this paper, preliminary gate reliability of p-GaN HEMTs under high positive gate bias is studied. Gate robustness is of great interest both from an academic and industrial point of view; in fact, different tests and models can be explored to estimate the device lifetime, which must meet some minimum product requirements, as specified by international standards (AEC Q101, JESD47, etc.).
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