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Many big data have interconnected and dynamic graph structures growing over time. Analyzing these graphical data requires the hidden relationship between the nodes in the graphs to be identified, which has conventionally been achieved by finding the effective similarity. However, graphs are generally non-Euclidean, which does not allow finding it. In this study, the non-Euclidean graphs are mapped to a specific crossbar array (CBA) composed of self-rectifying memristors and metal cells at the diagonal positions. The sneak current, an intrinsic physical property in the CBA, allows for the identification of the similarity function. The sneak-current-based similarity function indicates the distance between the nodes, which can be used to predict the probability that unconnected nodes will be connected in the future, connectivity between communities, and neural connections in a brain. When all bit lines of the CBA are connected to the ground, the sneak current is suppressed, and the CBA can be used to search for adjacent nodes. This work demonstrates the physical calculation methods applied to various graphical problems using the CBA composed of the self-rectifying memristor based on the HfO switching layer. Moreover, such applications suffer less from the memristors' inherent issues related to their stochastic nature.
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http://dx.doi.org/10.1002/adma.202209503 | DOI Listing |
Nat Commun
August 2025
Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.
Graph data is crucial for modeling complex relationships in various fields, but conventional graph computing methods struggle to handle increasingly intricate and large-scale graph data. Electric current-based graph computing and Quantum-inspired graph computing offer innovative hardware-based solutions to these challenges. Electric current-based graph computing has progressed from Euclidean graph data to non-Euclidean ones using the memristive crossbar arrays.
View Article and Find Full Text PDFNano Converg
August 2025
Department of Semiconductor Systems Engineering, Sejong University, Seoul, 05006, Republic of Korea.
Lead-free halide-perovskite memristors have advanced rapidly from initial proof-of-concept junctions to centimeter-scale selector-free crossbar arrays, maintaining full compatibility with CMOS backend processes. In these highly interconnected matrices, surface passivation, strain-relief interfaces, and non-toxic B-site substitutions successfully reduce sneak currents and stabilize resistance states. The Introduction section lays out the structural and functional basis, detailing phase behavior, bandgap tunability, and tolerance-factor-guided crystal design within Ruddlesden-Popper, Dion-Jacobson, vacancy-ordered, and double-perovskite frameworks, each of which is evaluated for its ability to confine filaments and reduce crosstalk in crossbar configurations.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China.
Graphene heralded a new era in optoelectronic research and prospective multifunctional devices. Here, we demonstrate uncooled ultraviolet to mid-infrared multifunctional photodetectors based on monolayer graphene on a Pb[(MgNb)Ti]O (PMNPT) substrate, with capabilities in photodetection, memory, and signal processing. Using weak broad-spectral light, photoexcited holes in graphene are attracted by the stable spontaneous polarization within the PMNPT, inducing a gate tunable giant photogating effect.
View Article and Find Full Text PDFACS Nano
August 2025
Division of Materials Science and Engineering and Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Korea.
In this work, we demonstrate a 3D stacked memristor crossbar array capable of self-differential pairing, utilizing it as a random entropy source for a physical unclonable function (PUF). A 32 × 32 memristor crossbar array is fabricated, and an identical array is integrated on top of the first layer, forming a 2 × 32 × 32 3D stacked memristor crossbar array. To isolate the two crossbar arrays, a conventional back-end-of-line process is employed, using a SiO passivation layer applied via plasma-enhanced chemical vapor deposition and contact holes.
View Article and Find Full Text PDFSci Adv
July 2025
University of Southern California, Los Angeles, CA 90089, USA.
The von Neumann bottleneck has led to a substantial rise in energy consumption of computing hardware and memory systems, particularly for data-intensive tasks like signal processing. Memristor-based in-memory computing offers an efficient alternative by performing computations within analog memory. Here, we demonstrate real-time signal processing using a fused network that combines the real-time discrete Fourier transform (DFT) and convolutional neural network (CNN) on a memristor-based analog system on a chip (SoC).
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