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Article Abstract
In this work, a simple electrochemical oxidation method has been used to prepare p-type-GaOnanoparticles. This method overcomes the problem of doping high energy gap semiconductors to form p-type. The electron holes of-GaOwere caused by oxygen vacancy (Vo) and showed the shorter lattice constant and preferred orientation in XRD analysis. The peak area of oxygen vacancy also reflects a higher ratio than n-type GaOin x-ray photoelectron spectroscopy (XPS). The adsorption of reducing gas (CO, CH, and H) enhanced the resistance of the-GaOconfirming the p-type character of NPs. The DFT calculations showed that oxygen vacancy leads to higher energy of the Fermi level and is near the valence band. The binding energy of GaOand after interaction with gas molecular was also calculated which is analogous to our experimental data.
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