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A new heteroleptic complex series of tin was synthesized by the salt metathesis reaction of SnX (X = Cl, Br, and I) with aminoalkoxide and various -alkoxy-functionalized carboxamide ligands. The complexes, [ClSn(dmamp)] (), [BrSn(dmamp)] (), and [ISn(dmamp)] (), were prepared from the salt metathesis reaction of SnX with one equivalent of dmamp; [Sn(dmamp)(empa)] (), [Sn(dmamp)(mdpa)] (), and [Sn(dmamp)(edpa)] () were prepared via the salt metathesis reaction using complex with one equivalent of -alkoxy-functionalized carboxamide ligand. Complexes - displayed dimeric molecular structures with tin metal centers interconnected by μ-O bonding via the alkoxy oxygen atom. The molecular structures of complexes - showed distorted trigonal bipyramidal geometries with lone pair electrons in the equatorial position. Using complex as a tin precursor, SnO films were deposited by chemical solution deposition (CSD) and subsequent post-deposition annealing (PDA) at high temperatures. SnO and SnO films were selectively obtained under controlled PDA atmospheres of argon and oxygen, respectively. The SnO films featured a tetragonal romarchite structure with high crystallinity and a preferred growth orientation along the (101) plane. They also exhibited a lower transmittance of >52% at 400 nm due to an optical band gap of 2.9 eV. In contrast, the SnO films exhibited a tetragonal cassiterite crystal structure and an extremely high transmittance of >97% at 400 nm was observed with an optical band gap of 3.6 eV.
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http://dx.doi.org/10.1021/acsomega.1c05744 | DOI Listing |
Atomic layer deposition (ALD) enables an excellent surface coverage and uniformity in the preparation of large-area metal-oxide thin films. In particular, ALD-processed SnO has demonstrated great potential as an electron transport layer in flexible perovskite solar cells (PSCs) and tandem modules. However, the poor electrical conductivities and surface wettabilities of amorphous SnO remain critical challenges for commercialization.
View Article and Find Full Text PDFNanoscale Adv
September 2025
Luxembourg Institute of Science and Technology (LIST) 41 Rue du Brill, L-4422 Belvaux Luxembourg
Nanogranular films obtained by the soft assembly of atomic clusters feature functional properties that are of interest in a variety of fields, ranging from gas sensing to neuromorphic computing, heterogeneous catalysis and the biomedical sector. Bimetallic nanogranular films, combining a post-transition metal (tin) and a catalytic metal (platinum), were produced using supersonic cluster beam deposition. By operating the cluster source with a double-rod cathode or sintered cathode configuration, completely different nanostructures were obtained.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Institute for Energy Research (School for Future Technology), School of the Environment and Safety Engineering, Research Center of Fluid Machinery Engineering and Technology, Jiangsu University, Zhenjiang, Jiangsu 212013, China.
The detection of hydrogen sulfide (HS) in humid environments remains a significant challenge, particularly in wearable gas sensors where humidity, mechanical flexibility, and power consumption are critical constraints. In this study, we introduce a stretchable, humidity-resistant HS sensor based on microcrumpled SnO quantum-wire films, designed for efficient gas detection at room temperature with low-power consumption. The sensor's architecture enhances gas adsorption by increasing the active surface area while minimizing water accumulation through surface energy modulation.
View Article and Find Full Text PDFMicromachines (Basel)
August 2025
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan.
In this study, tin oxide (SnO) resistive random-access memory (RRAM) thin films were fabricated using the thermal evaporation and radiofrequency and dc frequency sputtering techniques for metal-insulator-metal (MIM) structures. The fabrication process began with the deposition of a silicon dioxide (SiO) layer onto a silicon (Si) substrate, followed by the deposition of a titanium nitride (TiN) layer to serve as the bottom electrode. Subsequently, the tin oxide (SnO) layer was deposited as the resistive switching insulator.
View Article and Find Full Text PDFSci Rep
August 2025
Marwadi University Research Center, Department of Computer Engineering, Faculty of Engineering and Technology, Marwadi University, Rajkot, 360003, Gujarat, India.
This research investigates the fabrication of surfactant-mixed tin oxide (SnO) nanostructured thin films on a fluorine-doped tin oxide (FTO) substrate via hydrothermal synthesis, focusing on their structural, morphological, optical, and electrical properties for sensor applications. To examine the effect of surfactant concentration, cetyltrimethylammonium bromide (CTAB) was incorporated at varying weight percentages (0%, 6%, 11%, 16%, and 20%), resulting in five distinct sensor samples, labelled SnO-1, SnO-2, SnO-3, SnO-4, and SnO-5, respectively. X-Ray Diffraction (XRD) analysis confirms a tunable crystallite size from 12.
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