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We theoretically explore the potential of SiN on SiO waveguide platform toward a wideband spectroscopic detection around the optical wavelength of 2 μm. The design of SiN on SiO waveguide architectures consisting of a SiN slot waveguide for a wideband on-chip spectroscopic sensing around 2 μm, and a SiN multi-mode interferometer (MMI)-based coupler for light coupling from classical strip waveguide into the identified SiN slot waveguides over a wide spectral range are investigated. We found that a SiN on SiO slot waveguide structure can be designed for using as optical interaction part over a spectral range of interest, and the MMI structure can be used to enable broadband optical coupling from a strip to the slot waveguide for wideband multi-gas on-chip spectroscopic sensing. Reasons for the operating spectral range of the system are discussed.
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http://dx.doi.org/10.3390/s21072513 | DOI Listing |
ACS Appl Mater Interfaces
August 2025
State Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology, Harbin 150001, China.
With the advent of the AI era, silicon-based semiconductor material bonding has emerged as an important means to achieve optoelectronic integration and miniaturization. It is indispensable in areas such as micro/nanoelectromechanical systems (M/NEMS), Lab-on-Chip, silicon-on-insulator (SOI) substrates, and advanced hybrid bonding. However, existing bonding methods have several limitations, such as various types of plasma-induced damage and low in situ bonding strength.
View Article and Find Full Text PDFNanoscale
July 2025
National Centre of Nano Fabrication and Characterisation, DTU Nanolab, Technical University of Denmark, Kongens Lyngby, Denmark.
Electron beam induced effects in liquid phase transmission electron microscopy (LPTEM) encompass changes introduced to both the liquid sample and the material encapsulating the liquid. Typically, LPTEM beam effect studies have focused on the interaction of the electron beam with the liquid itself, while the interaction with the encapsulating material has often not been considered. Here, the chemical changes of silicon nitride (SiN) thin films exposed to water, which are the conditions typically used in commercial LPTEM systems have been studied.
View Article and Find Full Text PDFNanomaterials (Basel)
June 2025
Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Ningbo 315327, China.
Silicon oxynitride (SiON, hereafter denoted as SiON) thin films represent an intermediate phase between silicon dioxide (SiO) and silicon nitride (SiN). Through systematic compositional ratio adjustments, the refractive index can be precisely tuned across a wide range from 1.45 to 2.
View Article and Find Full Text PDFACS Appl Mater Interfaces
May 2025
College of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
As device scaling processes, widely used silicon dioxide (SiO) films in semiconductor devices face increasing challenges from interfacial defects, oxygen vacancies, and suboxide states that degrade their dielectric performance. Therefore, an effective post-treatment method is critical for enhancing their stability, reproducibility, and reliability. In this study, SiO films deposited via plasma-enhanced chemical vapor deposition (PECVD) were treated with nitric oxide (NO) plasma for durations of 0, 1, 4, and 10 min to evaluate its impact on their electrical and chemical structural properties.
View Article and Find Full Text PDFSmall
May 2025
State Key Laboratory of Silicon and Advanced Semiconductor Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Silicon monoxide (SiO) has garnered significant attention as a promising anode material for high-energy-density lithium-ion batteries due to its lower volume expansion relative to pure silicon (Si) and its higher capacity compared to graphite. Nevertheless, the poor intrinsic electronic/ionic conductivity and the low initial Coulombic efficiency (ICE) of SiO result in inferior rate capability and inadequate practical energy density, hindering its commercial viability. Here, a simultaneous prelithiation and in situ nitrogen (N) doping approach for SiO utilizing lithium nitride (LiN), which significantly enhances both the ICE and lithium-ion (Li) diffusion kinetics, is proposed.
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