Category Ranking
98%
Total Visits
921
Avg Visit Duration
2 minutes
Citations
20
Article Abstract
2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the gate-induced change in charge density makes amplitude control possible, creating a new programmable unilateral rectifier. The study of 2D vdWHs-based reversible unilateral rectifier is lacking, although it can give rise to a new degree of freedom for modulating the output state. Here, a InSe/GeSe vdWH-FET is constructed as a gate-controllable half wave rectifier. The device exhibits stepless adjustment from forward to backward rectifying performance, leading to multiple operation states of output level. Near-broken band alignment in the InSe/GeSe vdWH-FET is a crucial feature for high-performance reversible rectifier, which is shown to have backward and forward rectification ratio of 1:38 and 963:1, respectively. Being further explored as a new bridge rectifier, the InSe/GeSe device has great potential in future gate-controllable alternating current/direct current convertor. These results indicate that 2D vdWHs with near-broken band alignment can offer a pathway to simplify the commutating circuit and regulating speed circuit.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7887575 | PMC |
| http://dx.doi.org/10.1002/advs.201903252 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near-Broken Band Alignment.
Adv Sci (Weinh)
February 2021
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100083 China.
2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the gate-induced change in charge density makes amplitude control possible, creating a new programmable unilateral rectifier. The study of 2D vdWHs-based reversible unilateral rectifier is lacking, although it can give rise to a new degree of freedom for modulating the output state.
View Article and Find Full Text PDFNear-Broken-Gap Alignment between FeWO and FeWO for Ohmic Direct p-n Junction Thermoelectrics.
ACS Appl Mater Interfaces
February 2021
Department of Chemistry, Centre for Materials Science and Nanotechnology (SMN), University of Oslo, P.O.B 1126 Blindern, 0318 Oslo, Norway.
We report a near-broken-gap alignment between p-type FeWO and n-type FeWO, a model pair for the realization of Ohmic direct junction thermoelectrics. Both undoped materials have a large Seebeck coefficient and high electrical conductivity at elevated temperatures, due to inherent electronic defects. A band-alignment diagram is proposed based on X-ray photoelectron and ultraviolet-visible light reflectance spectroscopy.
View Article and Find Full Text PDFHigh photoresponsivity and broadband photodetection with a band-engineered WSe/SnSe heterostructure.
Nanoscale
February 2019
Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland.
van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe2/SnSe2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths.
View Article and Find Full Text PDFWSe/MoS and MoTe/SnSe van der Waals heterostructure transistors with different band alignment.
Nanotechnology
October 2017
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Heterostructure field-effect transistors (hetero-FETs) are experimentally demonstrated, consisting of van der Waals heterostructure channels based on a 2D semiconductor. By optimally selecting the band alignment of the heterostructure channels, different output characteristics of the hetero-FETs were achieved. In atomically thin WSe/MoS hetero-FET with staggered energy band, the oscillating transfer characteristic and negative transconductance were realized.
View Article and Find Full Text PDFInfluence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy.
Nanotechnology
November 2014
Institute of Electronics, Microelectronics and Nanotechnology, CNRS and University of Lille, Avenue Poincaré CS 60069, 59652 Villeneuve d'Ascq Cedex, France.
We report on the selective area molecular beam epitaxy of InAs/AlGaSb heterostructures on a GaSb (001) substrate. This method is used to realize Esaki tunnel diodes with a tunneling area down to 50 nm × 50 nm. The impact of the size reduction on the peak current density of the diode is investigated, and we show how the formation of the InAs facets can deeply affect the band-to-band tunneling properties of the heterostructure.
View Article and Find Full Text PDF