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Article Abstract
Chemical vapor deposition has been highlighted as a promising tool for facile graphene growth in a large area. However, grain boundaries impose detrimental effects on the mechanical strength or electrical mobility of graphene. Here, we demonstrate that high-pressure hydrogen treatment in the preannealing step plays a key role in fast and large grain growth and leads to the successful synthesis of large grain graphene in 10 s. Large single grains with a maximum size of ∼160 μm grow by recrystallization of nanograins, but ∼1% areal coverage of nanograins remains with 28-30° misorientation angles. Our findings will provide insights into mass production of high-quality graphene.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7745212 | PMC |
| http://dx.doi.org/10.1021/acsomega.0c02701 | DOI Listing |
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