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The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructure. A comparison of electrical transport measurements in PtMn with and without the Pt layer, corroborated by x-ray imaging, reveals reversible switching of the thermally-stable antiferromagnetic Néel vector by spin-orbit torques. The presented results demonstrate the potential of polycrystalline metals for antiferromagnetic spintronics.
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http://dx.doi.org/10.1038/s41467-020-19511-4 | DOI Listing |
Phys Rev Lett
August 2025
University of Konstanz, Department of Physics and Center for Applied Photonics, D-78457 Konstanz, Germany.
Femtosecond laser excitation of nanometer thin heterostructures comprising a heavy metal and a magnetically ordered material is known to result in the emission of terahertz radiation. However, the nature of the emitted radiation from heavy metal/antiferromagnet heterostructures has sparked debates and controversies in the literature. Here, we unambiguously separate spin and charge contributions from Pt/NiO heterostructures by introducing an unprecedented methodology combining high external magnetic fields with a symmetry analysis of the emitted terahertz polarization.
View Article and Find Full Text PDFPhys Rev Lett
August 2025
Shanghai Jiao Tong University, Tsung-Dao Lee Institute, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai 200240, China.
While Andreev bound states (ABSs) have been realized in engineered superconducting junctions, their direct observation in normal metal-superconductor heterostructures-enabled by quantum confinement-remains experimentally elusive. Here, we report the detection of ABSs in ultrathin metallic islands (Bi, Ag, and SnTe) grown on the s-wave superconductor NbN. Using high-resolution scanning tunneling microscopy and spectroscopy, we clearly reveal in-gap ABSs with energies symmetric about the Fermi level.
View Article and Find Full Text PDFJ Colloid Interface Sci
September 2025
State Key Laboratory of Heavy Oil Processing, College of Chemistry and Chemical Engineering, China University of Petroleum (East China), Qingdao 266580, China.
Reaction intermediates (RI) are key factors that directly determine the efficiency of the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). In this study, a local electric field microenvironment was built in a FeNi and MoNi heterostructure (H-FeNiMo/NMF) to induce the redistribution of hydroxyls and protons on the metal sites during the OER and HER. H-FeNiMo/NMF requires only 270 and 155 mV to reach 100 mA cm in alkaline media for OER and HER, respectively.
View Article and Find Full Text PDFNano Lett
September 2025
Center for 2D Quantum Heterostructures, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea.
Ultrathin amorphous materials are promising counterparts to 2D crystalline materials, yet their properties and functionalities remain poorly understood. Amorphous boron nitride (aBN) has attracted attention for its ultralow dielectric constant and superior manufacturability compared with hexagonal boron nitride. Here, we demonstrate wafer-scale growth of ultrathin aBN films with exceptional thickness and composition uniformity using capacitively coupled plasma-chemical vapor deposition (CCP-CVD) at 400 °C.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China.
Overcoming the persistent challenges of high operating temperatures and poor selectivity in metal oxide semiconductor (MOS) gas sensors, this work enhances defect sites in the sensing material through heterostructure construction and builds mesoporous architectures using MOF-derived carbon skeletons as templates. The synergistic effects of multiple mechanisms significantly improve gas-sensing performance, successfully fabricating a ZnO/PCS flexible room-temperature gas sensor with exceptional room-temperature DMF detection capabilities. The nitrogen-containing porous carbon skeletons (PCSs) template shows a stable mesoporous microstructure with large pore volume.
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