Enhanced Field-Like Torque Generated from the Anisotropic Spin-Split Effect in Triple-Domain RuO for Energy-Efficient Spin-Orbit Torque Magnetic Random-Access Memory.

Spin-current generation via the anisotropic spin-split effect has been predicted in antiferromagnetic RuO, where the symmetry of RuO plays a critical role in spin-orbit torque (SOT). This phenomenon has garnered attention for its potential to enable energy-efficient spintronic devices, such as SOT magnetic random-access memory. In this study, a high-quality RuO (100) epitaxial film with a well-controlled triple-domain-structure is analyzed, and it is confirmed that out-of-plane spin-current generation is independent of the Néel vector ( ).

Unconventional Hall effect and its variation with Co-doping in van der Waals FeGeTe.

Two-dimensional (2D) van der Waals (vdW) magnetic materials have attracted a lot of attention owing to the stabilization of long range magnetic order down to atomic dimensions, and the prospect of novel spintronic devices with unique functionalities. The clarification of the magnetoresistive properties and its correlation to the underlying magnetic configurations is essential for 2D vdW-based spintronic devices. Here, the effect of Co-doping on the magnetic and magnetotransport properties of FeGeTe have been investigated.

Spin-orbit torque switching of an antiferromagnetic metallic heterostructure.

The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints.

Formation and current-induced motion of synthetic antiferromagnetic skyrmion bubbles.

Skyrmion, a topologically-protected soliton, is known to emerge via electron spin in various magnetic materials. The magnetic skyrmion can be driven by low current density and has a potential to be stabilized in nanoscale, offering new directions of spintronics. However, there remain some fundamental issues in widely-studied ferromagnetic systems, which include a difficulty to realize stable ultrasmall skyrmions at room temperature, presence of the skyrmion Hall effect, and limitation of velocity owing to the topological charge.

Artificial Neuron and Synapse Realized in an Antiferromagnet/Ferromagnet Heterostructure Using Dynamics of Spin-Orbit Torque Switching.

Efficient information processing in the human brain is achieved by dynamics of neurons and synapses, motivating effective implementation of artificial spiking neural networks. Here, the dynamics of spin-orbit torque switching in antiferromagnet/ferromagnet heterostructures is studied to show the capability of the material system to form artificial neurons and synapses for asynchronous spiking neural networks. The magnetization switching, driven by a single current pulse or trains of pulses, is examined as a function of the pulse width (1 s to 1 ns), amplitude, number, and pulse-to-pulse interval.

Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system.

Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of the perpendicular magnetization by the SOT is achieved under an in-plane magnetic field collinear with an applied current. Typical structures studied so far comprise a nonmagnet/ferromagnet (NM/FM) bilayer, where the spin Hall effect in the NM is responsible for the switching.