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The rational design of a new class of photoresponsive tris(8-hydroxyquinolinato)aluminum(III) (Alq) complexes has been developed. By incorporating the photochromic dithienylethene units with different peripheral heterocycles into the Alq framework, the photochromic properties as well as photoswitching efficiency can be readily modulated, through effective photocyclization of the Al(III) complex. Such intrinsic photochromic behavior leads to the unprecedented enhancement in the electron-transporting properties as demonstrated by the as-fabricated electron-only device, rendering the realization of photoswitchable electron mobility. In addition, one of these complexes is capable of serving as an active layer for solution-processable resistive memory devices. Photocontrollable memory performance has been achieved with a binary memory behavior, with high ON/OFF ratio and long retention time. This work represents not only the first example of photoresponsive Alq-based electron-transporting materials but also the solution-processable Alq-based optical and resistive memory devices with photocontrollable performance.
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http://dx.doi.org/10.1021/jacs.0c03057 | DOI Listing |
J Colloid Interface Sci
September 2025
School of Electronic Information & Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, China.
The integration of information memory and computing enabled by nonvolatile memristive device has been widely acknowledged as a critical solution to circumvent the von Neumann architecture limitations. Herein, the Au/NiO/CaBiTiO/FTO (CBTi/NiO) heterojunction based memristor with varying film thicknesses are demonstrated on FTO/glass substrates, and the CBTi/NiO-4 sample shows the optimal memristor characteristics with 5 × 10 stable switching cycles and 10-s resistance state retention. The electrical conduction in the low-resistance state is dominated by Ohmic behavior, while the high-resistance state exhibited characteristics consistent with the space-charge-limited conduction (SCLC) model.
View Article and Find Full Text PDFCell
September 2025
Department of Medicine, University of California, San Francisco, San Francisco, CA 94143, USA; Howard Hughes Medical Institute, Chevy Chase, MD 20815, USA. Electronic address:
Adaptation of intestinal helminths to vertebrates involved the evolution of strategies to attenuate host tissue damage to support parasite reproduction and dissemination of offspring to the environment. Helminths initiate the IL-25-mediated tuft cell-type 2 innate lymphoid cell (ILC2) circuit that enhances barrier protection of the host, although viable parasites can target and limit this pathway. We used IL-25 alone to create small intestinal adaptation, marked by anatomic and immunologic changes that persisted months after induction.
View Article and Find Full Text PDFISA Trans
September 2025
School of Science, Yanshan University, Qinhuangdao Hebei, 066004, PR China. Electronic address:
This article concentrates on the issue of event-triggered dynamic output feedback control for Markovian jump complex dynamical networks (MJCNDs) subject to multiple cyberattacks. To alleviate the communication pressure, a new adaptive event-triggered mechanism (AETM) is proposed. This AETM incorporates a dynamically adjustable parameter and mode-dependent properties to enhance flexibility.
View Article and Find Full Text PDFComput Biol Med
September 2025
Structural Biology and Bio-Computing Lab, Department of Bioinformatics, Science Block, Alagappa University, Karaikudi, 630 003, Tamil Nadu, India. Electronic address:
Antimicrobial resistance endangers global health by rapidly disseminating Multidrug-resistant (MDR) pathogens that undermine antibiotic therapies. P.aeruginosa, a high-priority ESKAPE pathogen, exemplifies the crisis with complex resistance mechanisms that demand alternative strategies beyond conventional antibiotics.
View Article and Find Full Text PDFSmall
September 2025
Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China.
As a 2D material with distinctive ferroelectric properties, InSe offers significant potential for the applications in information memory and advanced data storage technologies. It also exhibits a complex phase diagram that is highly sensitive to temperature and pressure variations, resulting in diverse lattice configurations. While extensive studies have focused on the phase transition behavior of InSe, its impact on phonon transport remains largely unexplored.
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